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{'id': 'https://openalex.org/W2062471252', 'doi': 'https://doi.org/10.1016/j.jcrysgro.2007.04.002', 'title': 'Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE', 'display_name': 'Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE', 'publication_year': 2007, 'publication_date': '2007-07-01', 'ids': {'openalex': 'https://openalex.org/W2062471252', 'doi': 'https://doi.org/10.1016/j.jcrysgro.2007.04.002', 'mag': '2062471252'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1016/j.jcrysgro.2007.04.002', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S10719676', 'display_name': 'Journal of Crystal Growth', 'issn_l': '0022-0248', 'issn': ['0022-0248', '1873-5002'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320990', 'host_organization_name': 'Elsevier BV', 'host_organization_lineage': ['https://openalex.org/P4310320990'], 'host_organization_lineage_names': ['Elsevier BV'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5052995843', 'display_name': 'C. Skierbiszewski', 'orcid': 'https://orcid.org/0000-0002-4718-4607'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': True, 'raw_author_name': 'C. Skierbiszewski', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5069096575', 'display_name': 'M. Siekacz', 'orcid': 'https://orcid.org/0000-0002-2359-8813'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'M. Siekacz', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5044834240', 'display_name': 'P. Perlin', 'orcid': 'https://orcid.org/0000-0001-5529-4075'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'P. Perlin', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5019592212', 'display_name': 'Anna Feduniewicz-Żmuda', 'orcid': 'https://orcid.org/0000-0002-8801-9851'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'A. Feduniewicz-Żmuda', 'raw_affiliation_strings': ['TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5080565717', 'display_name': 'G. Cywiński', 'orcid': 'https://orcid.org/0000-0003-3616-8756'}, 'institutions': [{'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'G. Cywiński', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5005318154', 'display_name': 'I. Grzegory', 'orcid': 'https://orcid.org/0000-0002-0137-6259'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'I. Grzegory', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5001056466', 'display_name': 'M. Leszczyński', 'orcid': 'https://orcid.org/0000-0002-9321-9268'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'M. Leszczyński', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5027118719', 'display_name': 'Z. R. Wasilewski', 'orcid': 'https://orcid.org/0000-0001-7116-5863'}, 'institutions': [{'id': 'https://openalex.org/I4210130650', 'display_name': 'Institute for Microstructural Sciences', 'ror': 'https://ror.org/03v7h1165', 'country_code': 'CA', 'type': 'facility', 'lineage': ['https://openalex.org/I4210130650', 'https://openalex.org/I4210159778']}], 'countries': ['CA'], 'is_corresponding': False, 'raw_author_name': 'Z.R. Wasilewski', 'raw_affiliation_strings': ['Institute for Microstructural Sciences, National Research Council, Ottawa, Canada'], 'affiliations': [{'raw_affiliation_string': 'Institute for Microstructural Sciences, National Research Council, Ottawa, Canada', 'institution_ids': ['https://openalex.org/I4210130650']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5030041143', 'display_name': 'S. Porowski', 'orcid': 'https://orcid.org/0000-0002-5603-4926'}, 'institutions': [{'id': 'https://openalex.org/I4210099333', 'display_name': 'TopGaN (Poland)', 'ror': 'https://ror.org/011wwxv17', 'country_code': 'PL', 'type': 'company', 'lineage': ['https://openalex.org/I4210099333']}, {'id': 'https://openalex.org/I4210091332', 'display_name': 'Institute of High Pressure Physics', 'ror': 'https://ror.org/00fb7yx07', 'country_code': 'PL', 'type': 'facility', 'lineage': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}, {'id': 'https://openalex.org/I99542240', 'display_name': 'Polish Academy of Sciences', 'ror': 'https://ror.org/01dr6c206', 'country_code': 'PL', 'type': 'government', 'lineage': ['https://openalex.org/I99542240']}], 'countries': ['PL'], 'is_corresponding': False, 'raw_author_name': 'S. Porowski', 'raw_affiliation_strings': ['Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland'], 'affiliations': [{'raw_affiliation_string': 'TopGaN Ltd., ul Sokolowska 29/37, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210099333']}, {'raw_affiliation_string': 'Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa, Poland', 'institution_ids': ['https://openalex.org/I4210091332', 'https://openalex.org/I99542240']}]}], 'countries_distinct_count': 2, 'institutions_distinct_count': 4, 'corresponding_author_ids': ['https://openalex.org/A5052995843'], 'corresponding_institution_ids': ['https://openalex.org/I4210099333', 'https://openalex.org/I4210091332', 'https://openalex.org/I99542240'], 'apc_list': {'value': 2990, 'currency': 'USD', 'value_usd': 2990, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 0.239, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 21, 'citation_normalized_percentile': {'value': 0.817995, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 88, 'max': 89}, 'biblio': {'volume': '305', 'issue': '2', 'first_page': '346', 'last_page': '354'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10022', 'display_name': 'Quantum Dot Devices and Semiconductors', 'score': 0.9989, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10090', 'display_name': 'Zinc Oxide Nanostructures', 'score': 0.9971, 'subfield': {'id': 'https://openalex.org/subfields/2505', 'display_name': 'Materials Chemistry'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/indium-nitride', 'display_name': 'Indium nitride', 'score': 0.73833334}, {'id': 'https://openalex.org/keywords/band-parameters', 'display_name': 'Band Parameters', 'score': 0.474534}], 'concepts': [{'id': 'https://openalex.org/C3792809', 'wikidata': 'https://www.wikidata.org/wiki/Q898542', 'display_name': 'Molecular beam epitaxy', 'level': 4, 'score': 0.81283677}, {'id': 'https://openalex.org/C2777081994', 'wikidata': 'https://www.wikidata.org/wiki/Q418616', 'display_name': 'Indium nitride', 'level': 4, 'score': 0.73833334}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.68019646}, {'id': 'https://openalex.org/C159122135', 'wikidata': 'https://www.wikidata.org/wiki/Q737571', 'display_name': 'Dislocation', 'level': 2, 'score': 0.6577903}, {'id': 'https://openalex.org/C543292547', 'wikidata': 'https://www.wikidata.org/wiki/Q1094', 'display_name': 'Indium', 'level': 2, 'score': 0.63646543}, {'id': 'https://openalex.org/C78434282', 'wikidata': 'https://www.wikidata.org/wiki/Q11656', 'display_name': 'Diode', 'level': 2, 'score': 0.55281085}, {'id': 'https://openalex.org/C110738630', 'wikidata': 'https://www.wikidata.org/wiki/Q1135540', 'display_name': 'Epitaxy', 'level': 3, 'score': 0.5263637}, {'id': 'https://openalex.org/C194760766', 'wikidata': 'https://www.wikidata.org/wiki/Q410851', 'display_name': 'Nitride', 'level': 3, 'score': 0.5252592}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.46644542}, {'id': 'https://openalex.org/C82706917', 'wikidata': 'https://www.wikidata.org/wiki/Q10251', 'display_name': 'Plasma', 'level': 2, 'score': 0.42771137}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.4122348}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.26606166}, {'id': 'https://openalex.org/C8010536', 'wikidata': 'https://www.wikidata.org/wiki/Q160398', 'display_name': 'Crystallography', 'level': 1, 'score': 0.22001955}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.21711421}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.08998552}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1016/j.jcrysgro.2007.04.002', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S10719676', 'display_name': 'Journal of Crystal Growth', 'issn_l': '0022-0248', 'issn': ['0022-0248', '1873-5002'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320990', 'host_organization_name': 'Elsevier BV', 'host_organization_lineage': ['https://openalex.org/P4310320990'], 'host_organization_lineage_names': ['Elsevier BV'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 36, 'referenced_works': ['https://openalex.org/W1657238061', 'https://openalex.org/W169197474', 'https://openalex.org/W1965571863', 'https://openalex.org/W1971853368', 'https://openalex.org/W1974565550', 'https://openalex.org/W1977788622', 'https://openalex.org/W1991215043', 'https://openalex.org/W1999619919', 'https://openalex.org/W2000543377', 'https://openalex.org/W2002068704', 'https://openalex.org/W2012773018', 'https://openalex.org/W2020079249', 'https://openalex.org/W2020567826', 'https://openalex.org/W2035552528', 'https://openalex.org/W2036741731', 'https://openalex.org/W2043187989', 'https://openalex.org/W2046351347', 'https://openalex.org/W2046603258', 'https://openalex.org/W2047773189', 'https://openalex.org/W2049520739', 'https://openalex.org/W2050487076', 'https://openalex.org/W2054539494', 'https://openalex.org/W2054621303', 'https://openalex.org/W2056798331', 'https://openalex.org/W2056946567', 'https://openalex.org/W2069038691', 'https://openalex.org/W2072969029', 'https://openalex.org/W2074191321', 'https://openalex.org/W2079247164', 'https://openalex.org/W2080541127', 'https://openalex.org/W2086044713', 'https://openalex.org/W2091628130', 'https://openalex.org/W2093258331', 'https://openalex.org/W2150105757', 'https://openalex.org/W2172018523', 'https://openalex.org/W2173696887'], 'related_works': ['https://openalex.org/W4248709371', 'https://openalex.org/W4237354673', 'https://openalex.org/W2991119736', 'https://openalex.org/W2944731578', 'https://openalex.org/W2590862948', 'https://openalex.org/W2521837712', 'https://openalex.org/W2116931315', 'https://openalex.org/W2102324661', 'https://openalex.org/W2096095135', 'https://openalex.org/W2064640999'], 'abstract_inverted_index': {'Plasma-assisted': [0], 'molecular': [1], 'beam': [2], 'epitaxy': [3], '(PAMBE)': [4], 'has': [5], 'recently': [6], 'emerged': [7], 'as': [8, 68, 70], 'a': [9], 'viable': [10], 'tool': [11], 'for': [12], 'production': [13], 'of': [14, 62, 93, 104, 126, 135, 158], 'nitride': [15], 'blue-violet': [16], 'laser': [17], 'diodes': [18], 'operating': [19], 'at': [20, 96, 147], 'room': [21], 'temperature': [22], 'in': [23, 65, 85, 107, 122], 'continuous': [24], 'wave': [25], 'mode': [26, 140], 'and': [27, 100, 143, 166], 'high': [28, 124], 'output': [29], 'powers': [30], '[C.': [31], 'Skierbiszewski,': [32], 'P.': [33, 37], 'Wisniewski,': [34], 'M.': [35, 45], 'Siekacz,': [36], 'Perlin,': [38], 'A.': [39], 'Feduniewicz-Zmuda,': [40], 'G.': [41], 'Nowak,': [42], 'I.': [43], 'Grzegory,': [44], 'Leszczynski,': [46], 'S.': [47], 'Porowski,': [48], 'Appl.': [49], 'Phys.': [50], 'Lett.': [51], '88': [52], '(2006)': [53], '221108].': [54], 'The': [55, 129], 'present': [56], 'work': [57], 'reviews': [58], 'the': [59, 63, 82, 102, 109, 153, 156], 'current': [60], 'state': [61], 'art': [64], 'this': [66, 132], 'program': [67], 'well': [69], 'discusses': [71], 'its': [72], 'future': [73], 'directions.': [74], 'Two': [75], 'elements': [76], 'are': [77], 'given': [78], 'particular': [79], 'attention:': [80], '(1)': [81], 'epitaxial': [83], 'growth': [84, 98, 110, 113, 139, 149, 157], 'metal-rich': [86], 'conditions,': [87], 'which': [88], 'enables': [89], 'effective': [90], 'lateral': [91], 'diffusion': [92], 'N': [94], 'adatoms': [95], 'low': [97, 148], 'temperatures': [99, 150], '(2)': [101], 'role': [103], 'threading': [105], 'dislocations': [106], 'destabilizing': [108], 'front.': [111], 'Low-temperature': [112], 'by': [114], 'PAMBE': [115], 'on': [116], 'dislocation-free': [117], 'GaN': [118], 'substrates': [119], 'is': [120], 'instrumental': [121], 'achieving': [123], 'performance': [125], 'optoelectronic': [127], 'structures.': [128], 'inherent': [130], 'to': [131, 155], 'process': [133], 'capability': [134], 'sustaining': [136], 'two-dimensional': [137], 'step-flow': [138], '(with': [141], 'straight': [142], 'parallel': [144], 'atomic': [145], 'steps)': [146], 'opens': [151], 'up': [152], 'way': [154], 'strained': [159], 'multilayer': [160], 'structures': [161], 'with': [162, 167], 'no': [163], 'compositional': [164], 'fluctuations': [165], 'flat': [168], 'interfaces.': [169]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2062471252', 'counts_by_year': [{'year': 2022, 'cited_by_count': 1}, {'year': 2021, 'cited_by_count': 1}, {'year': 2020, 'cited_by_count': 2}, {'year': 2019, 'cited_by_count': 3}, {'year': 2016, 'cited_by_count': 3}, {'year': 2015, 'cited_by_count': 3}, {'year': 2014, 'cited_by_count': 1}, {'year': 2013, 'cited_by_count': 1}, {'year': 2012, 'cited_by_count': 2}], 'updated_date': '2024-08-15T01:27:23.826556', 'created_date': '2016-06-24'}