Title: Indium Predeposition-Enabled Vapor–Liquid–Solid Growth of InN Nanowires
Abstract: InN nanowires were grown via a vapor–liquid–solid mechanism using indium powder and ammonia as reagents. Energy-dispensive spectroscopy characterizations show that nanowires feature tips at one end, which are Au–In–Si alloy, while the stems of the nanowires are silicon doping indium nitride. The growth direction <0111> of these InN nanowires is first reported. The substrate was carefully prepared before the growth via depositing indium on a 2 nm Au thin film coated Si(100) [Au–Si(100)]. Control experiments validated that no InN nanowires can be grown using the Au–Si(100) substrate without depositing indium.
Publication Year: 2011
Publication Date: 2011-09-26
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot