Title: Role of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
Abstract: Advanced MaterialsVolume 19, Issue 17 p. 2232-2235 Communication Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory† M. Janousch, M. Janousch [email protected] Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorG. I. Meijer, G. I. Meijer [email protected] IBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)Search for more papers by this authorU. Staub, U. Staub Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorB. Delley, B. Delley Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorS. F. Karg, S. F. Karg IBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)Search for more papers by this authorB. P. Andreasson, B. P. Andreasson Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this author M. Janousch, M. Janousch [email protected] Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorG. I. Meijer, G. I. Meijer [email protected] IBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)Search for more papers by this authorU. Staub, U. Staub Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorB. Delley, B. Delley Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this authorS. F. Karg, S. F. Karg IBM Research, Zurich Research Laboratory, 8803 Rüschlikon (Switzerland)Search for more papers by this authorB. P. Andreasson, B. P. Andreasson Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland)Search for more papers by this author First published: 26 July 2007 https://doi.org/10.1002/adma.200602915Citations: 477 † M.J., G.I.M., and U.S. contributed equally to this work. We thank J. G. Bednorz, W. Riess, and R. Allenspach for discussions, M. Schwarz and A. Jakubowicz, Bookham AG, Zurich, Switzerland for support with infrared microscopy, and U. Drechsler, F. Horst, R. Stutz, and D. Widmer for technical assistance. Part of this work was performed at the Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Transition metal oxides exhibiting a bistable resistance state are attractive for nonvolatile memory applications. The relevance of oxygen vacancies for the resistance-change memory is investigated by X-ray fluorescence (see figure), infrared microscopy, and X-ray absorption spectroscopy using Cr-doped SrTiO3 as an example. The microscopic origin of resistance switching in this class of materials may be due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes. Citing Literature Volume19, Issue17September, 2007Pages 2232-2235 RelatedInformation