Title: Determination of In concentration in pseudomorphic InxGa1−xN quantum wells based on convergent-beam electron diffraction
Abstract: An approach based on the technique of convergent-beam electron diffraction (CBED) has been used to determine the elemental composition of a pseudomorphic GaN/InxGa1−xN/GaN quantum-well structure on the nanometer scale. Areas of triangles formed by intersecting higher order Laue-zone (HOLZ) lines are highly sensitive to lattice-parameter variations. By calculating the ratio of triangle areas, the local In concentration is estimated to within ±0.5% once lattice expansion in the growth direction has been taken into account. Moreover, shifts in the HOLZ-line positions as the CBED probe is moved along the quantum well provide a simple and rapid indication of local fluctuations in In content. The technique is applicable to other pseudomorphically strained epitaxial layers.
Publication Year: 2004
Publication Date: 2004-01-26
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 3
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