Title: Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO/sub 2/ universal mobility with an EOT=/spl sim/1 nm
Abstract: HfO/sub 2/ and HfSiON gate dielectrics with high-field electron mobility greater than 90% of the SiO/sub 2/ universal mobility and equivalent oxide thickness (EOT) approaching 1 nm are successfully achieved by co-optimizing the metal gate/high-k/bottom interface stack. Besides the thickness of the high-/spl kappa/ dielectrics, the thickness of the ALD TiN metal gate and the formation of the bottom interface also play an important role in scaling EOT and achieving high electron mobility. A phase transformation is observed for aggressively scaled HfO/sub 2/ and HfSiON, which may be responsible for the high mobility and low charge trapping of the optimized HfO/sub 2/ gate stack.
Publication Year: 2006
Publication Date: 2006-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 12
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