Title: Eliminating channeling tail by lower dose preimplantation
Abstract:We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneli...We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary-ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.Read More
Publication Year: 1990
Publication Date: 1990-03-26
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 26
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