Publication Information

{'id': 'https://openalex.org/W2052356061', 'doi': 'https://doi.org/10.1117/12.59748', 'title': 'Pattern transfer capabilities of CAMP deep-UV resist', 'display_name': 'Pattern transfer capabilities of CAMP deep-UV resist', 'publication_year': 1992, 'publication_date': '1992-06-01', 'ids': {'openalex': 'https://openalex.org/W2052356061', 'doi': 'https://doi.org/10.1117/12.59748', 'mag': '2052356061'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1117/12.59748', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S183492911', 'display_name': 'Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE', 'issn_l': '0277-786X', 'issn': ['0277-786X', '1996-756X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310315543', 'host_organization_name': 'SPIE', 'host_organization_lineage': ['https://openalex.org/P4310315543'], 'host_organization_lineage_names': ['SPIE'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5001368173', 'display_name': 'Ivan S. Daraktchiev', 'orcid': None}, 'institutions': [], 'countries': ['BE'], 'is_corresponding': False, 'raw_author_name': 'Ivan S. Daraktchiev', 'raw_affiliation_strings': ['OCG Microelectronic Materials NV (Belgium)'], 'affiliations': [{'raw_affiliation_string': 'OCG Microelectronic Materials NV (Belgium)', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5063585615', 'display_name': 'Dirk Goossens', 'orcid': 'https://orcid.org/0000-0002-2806-8870'}, 'institutions': [], 'countries': ['BE'], 'is_corresponding': False, 'raw_author_name': 'Dirk Goossens', 'raw_affiliation_strings': ['OCG Microelectronic Materials NV (Belgium)'], 'affiliations': [{'raw_affiliation_string': 'OCG Microelectronic Materials NV (Belgium)', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5052471277', 'display_name': 'P. Matthijs', 'orcid': None}, 'institutions': [], 'countries': ['BE'], 'is_corresponding': False, 'raw_author_name': 'P. Matthijs', 'raw_affiliation_strings': ['OCG Microelectronic Materials NV (Belgium)'], 'affiliations': [{'raw_affiliation_string': 'OCG Microelectronic Materials NV (Belgium)', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5068204985', 'display_name': 'Mark Thirsk', 'orcid': None}, 'institutions': [], 'countries': ['BE'], 'is_corresponding': False, 'raw_author_name': 'Mark Thirsk', 'raw_affiliation_strings': ['OCG Microelectronic Materials NV (Belgium)'], 'affiliations': [{'raw_affiliation_string': 'OCG Microelectronic Materials NV (Belgium)', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5045143638', 'display_name': 'Andrew J. Blakeney', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I77566578', 'display_name': 'United Microelectronics (United States)', 'ror': 'https://ror.org/00vrhw316', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210161555', 'https://openalex.org/I77566578']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'Andrew J. Blakeney', 'raw_affiliation_strings': ['OCG Microelectronic Materials, Inc. (United States)'], 'affiliations': [{'raw_affiliation_string': 'OCG Microelectronic Materials, Inc. (United States)', 'institution_ids': ['https://openalex.org/I77566578']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5073878502', 'display_name': 'Omkaram Nalamasu', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I72090969', 'display_name': 'Nokia (United States)', 'ror': 'https://ror.org/038km2573', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I2738502077', 'https://openalex.org/I72090969']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'Omkaram Nalamasu', 'raw_affiliation_strings': ['AT&T-Bell Laboratories (United States)'], 'affiliations': [{'raw_affiliation_string': 'AT&T-Bell Laboratories (United States)', 'institution_ids': ['https://openalex.org/I72090969']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5040831702', 'display_name': 'May Cheng', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I72090969', 'display_name': 'Nokia (United States)', 'ror': 'https://ror.org/038km2573', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I2738502077', 'https://openalex.org/I72090969']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'May Cheng', 'raw_affiliation_strings': ['AT&T-Bell Laboratories (United States)'], 'affiliations': [{'raw_affiliation_string': 'AT&T-Bell Laboratories (United States)', 'institution_ids': ['https://openalex.org/I72090969']}]}], 'institution_assertions': [], 'countries_distinct_count': 2, 'institutions_distinct_count': 2, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 53}, 'biblio': {'volume': '1672', 'issue': None, 'first_page': '553', 'last_page': '553'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11338', 'display_name': 'Advancements in Photolithography Techniques', 'score': 0.9986, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11338', 'display_name': 'Advancements in Photolithography Techniques', 'score': 0.9986, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12224', 'display_name': 'Nanofabrication and Lithography Techniques', 'score': 0.9956, 'subfield': {'id': 'https://openalex.org/subfields/2204', 'display_name': 'Biomedical Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11723', 'display_name': 'Optical Coatings and Gratings', 'score': 0.9814, 'subfield': {'id': 'https://openalex.org/subfields/2508', 'display_name': 'Surfaces, Coatings and Films'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/photoresist', 'display_name': 'Photoresist', 'score': 0.90327734}, {'id': 'https://openalex.org/keywords/plasma-etching', 'display_name': 'Plasma Etching', 'score': 0.5377434}, {'id': 'https://openalex.org/keywords/monochromatic-color', 'display_name': 'Monochromatic color', 'score': 0.50713825}, {'id': 'https://openalex.org/keywords/dry-etching', 'display_name': 'Dry etching', 'score': 0.48151597}, {'id': 'https://openalex.org/keywords/stripping', 'display_name': 'Stripping (fiber)', 'score': 0.48132432}, {'id': 'https://openalex.org/keywords/extreme-ultraviolet-lithography', 'display_name': 'Extreme Ultraviolet Lithography', 'score': 0.45473486}], 'concepts': [{'id': 'https://openalex.org/C53524968', 'wikidata': 'https://www.wikidata.org/wiki/Q7315582', 'display_name': 'Resist', 'level': 3, 'score': 0.97167754}, {'id': 'https://openalex.org/C134406635', 'wikidata': 'https://www.wikidata.org/wiki/Q1439684', 'display_name': 'Photoresist', 'level': 3, 'score': 0.90327734}, {'id': 'https://openalex.org/C204223013', 'wikidata': 'https://www.wikidata.org/wiki/Q133036', 'display_name': 'Lithography', 'level': 2, 'score': 0.7477401}, {'id': 'https://openalex.org/C100460472', 'wikidata': 'https://www.wikidata.org/wiki/Q2368605', 'display_name': 'Etching (microfabrication)', 'level': 3, 'score': 0.6554159}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.55738866}, {'id': 'https://openalex.org/C107187091', 'wikidata': 'https://www.wikidata.org/wiki/Q2392011', 'display_name': 'Plasma etching', 'level': 4, 'score': 0.5377434}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.5097963}, {'id': 'https://openalex.org/C40833965', 'wikidata': 'https://www.wikidata.org/wiki/Q6901438', 'display_name': 'Monochromatic color', 'level': 2, 'score': 0.50713825}, {'id': 'https://openalex.org/C521977710', 'wikidata': 'https://www.wikidata.org/wiki/Q81163', 'display_name': 'Polymer', 'level': 2, 'score': 0.4914645}, {'id': 'https://openalex.org/C130472188', 'wikidata': 'https://www.wikidata.org/wiki/Q1640159', 'display_name': 'Reactive-ion etching', 'level': 4, 'score': 0.4892654}, {'id': 'https://openalex.org/C1291036', 'wikidata': 'https://www.wikidata.org/wiki/Q1191918', 'display_name': 'Dry etching', 'level': 4, 'score': 0.48151597}, {'id': 'https://openalex.org/C41952129', 'wikidata': 'https://www.wikidata.org/wiki/Q7624159', 'display_name': 'Stripping (fiber)', 'level': 2, 'score': 0.48132432}, {'id': 'https://openalex.org/C200274948', 'wikidata': 'https://www.wikidata.org/wiki/Q256845', 'display_name': 'Electron-beam lithography', 'level': 4, 'score': 0.47278902}, {'id': 'https://openalex.org/C2780992000', 'wikidata': 'https://www.wikidata.org/wiki/Q17016113', 'display_name': 'Generator (circuit theory)', 'level': 3, 'score': 0.45583892}, {'id': 'https://openalex.org/C162996421', 'wikidata': 'https://www.wikidata.org/wiki/Q371965', 'display_name': 'Extreme ultraviolet lithography', 'level': 2, 'score': 0.45473486}, {'id': 'https://openalex.org/C120665830', 'wikidata': 'https://www.wikidata.org/wiki/Q14620', 'display_name': 'Optics', 'level': 1, 'score': 0.41933954}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.4099046}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.16867685}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.14501691}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1117/12.59748', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S183492911', 'display_name': 'Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE', 'issn_l': '0277-786X', 'issn': ['0277-786X', '1996-756X'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310315543', 'host_organization_name': 'SPIE', 'host_organization_lineage': ['https://openalex.org/P4310315543'], 'host_organization_lineage_names': ['SPIE'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W2765886561', 'https://openalex.org/W2466887265', 'https://openalex.org/W2142584595', 'https://openalex.org/W2092925226', 'https://openalex.org/W2082133582', 'https://openalex.org/W2045553774', 'https://openalex.org/W2011001474', 'https://openalex.org/W2008860117', 'https://openalex.org/W1992895626', 'https://openalex.org/W1974499342'], 'abstract_inverted_index': {'The': [0], 'work': [1, 75], 'reported': [2], 'here': [3], 'is': [4, 100], 'concerned': [5], 'with': [6, 25], 'using': [7], 'a': [8, 47, 89], 'chemically': [9], 'amplified,': [10], 'positive': [11], 'tone,': [12], 'alkaline': [13], 'developable': [14], 'photoresist': [15], 'for': [16, 106], 'patterning': [17], '0.3': [18], '-': [19], '0.5': [20], '(mu)': [21], 'features': [22], 'by': [23], 'exposing': [24], 'monochromatic': [26], 'light': [27], 'at': [28], '(lambda)': [29], 'equals': [30], '248': [31], 'nm.': [32], 'More': [33], 'specifically,': [34], 'this': [35, 74], 'class': [36], 'of': [37, 64, 73, 91, 96], 'materials': [38, 66], 'employs': [39], 'tertiarybutoxycarbonyl': [40], '(t-BOC)': [41], 'protected': [42], 'polyhydroxystyrenesulfone': [43], 'polymer': [44], 'and': [45, 81], 'typically': [46], 'nitrobenzyl': [48], 'ester': [49], 'photo': [50], 'acid': [51], 'generator,': [52], 'usually': [53], 'referred': [54], 'to': [55], 'as': [56], 'the': [57, 61, 71, 78, 83, 97, 103, 107], 'CAMP': [58], 'resist.': [59], 'Since': [60], 'lithographic': [62, 98], 'performance': [63, 99], 'these': [65], 'has': [67], 'been': [68], 'already': [69], 'reported,': [70], 'emphasis': [72], 'falls': [76], 'on': [77], 'pattern': [79], 'transfer': [80], 'especially': [82], 'dry': [84], 'etching/resist': [85], 'stripping': [86], 'steps.': [87], 'As': [88], 'matter': [90], 'reference,': [92], 'only': [93], 'an': [94], 'example': [95], 'shown,': [101], 'indicating': [102], 'starting': [104], 'point': [105], 'plasma': [108], 'etching': [109], 'work.': [110]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2052356061', 'counts_by_year': [], 'updated_date': '2024-12-10T10:41:00.725438', 'created_date': '2016-06-24'}