Title: Growth of MoxN films via chemical vapor deposition of MoCl5 and NH3
Abstract: Polycrystalline MoxN (x = 1 or 2) films have been grown via chemical vapor deposition on 50 μm thick polycrystalline Ti substrates using molybdenum pentachloride (MoCl5) and anhydrous ammonia (NH3) in a cold-wall vertical pancake-style reactor. X-ray diffraction data indicated that a two-phase MoxN assemblage consisting of γ-Mo2N and δ-MoN was present in films deposited above 400 °C. The percentages of γ-Mo2N and δ-MoN in the films decreased and increased, respectively, as the deposition temperature increased at constant NH3flow rates and deposition pressures. The surface macrostructure of the as-deposited films was independent of the deposition temperature and was very similar to that of the uncoated Ti substrate. However, the microstructure of the films varied with the deposition temperature. Energy dispersive X-ray data indicated that films deposited at and above 400 °C did not contain detectable levels of chlorine.
Publication Year: 1998
Publication Date: 1998-04-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 21
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