Title: Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
Abstract: Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
Publication Year: 2012
Publication Date: 2012-01-16
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 73
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