Title: Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN
Abstract:This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20mA injection current, it was found that forward voltages were 3.33 and 3.39V w...This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20mA injection current, it was found that forward voltages were 3.33 and 3.39V while output powers were 9.0 and 10.6mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.Read More
Publication Year: 2007
Publication Date: 2007-04-02
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 28
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