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{'id': 'https://openalex.org/W1624711809', 'doi': None, 'title': 'Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles', 'display_name': 'Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles', 'publication_year': 2010, 'publication_date': '2010-01-01', 'ids': {'openalex': 'https://openalex.org/W1624711809', 'mag': '1624711809'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'http://dspace.mit.edu/handle/1721.1/59706', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'dissertation', 'type_crossref': 'dissertation', 'indexed_in': [], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5084512252', 'display_name': 'Jennifer C. Hsieh', 'orcid': 'https://orcid.org/0000-0001-8879-4746'}, 'institutions': [], 'countries': [], 'is_corresponding': True, 'raw_author_name': 'Jennifer Chia-Jen Hsieh', 'raw_affiliation_strings': [], 'affiliations': []}], 'institution_assertions': [], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': ['https://openalex.org/A5084512252'], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': None, 'has_fulltext': False, 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 64}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 0.5435, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'First-Principles Calculations for III-Nitride Semiconductors', 'score': 0.5435, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10461', 'display_name': 'Gas Sensing Technology and Materials', 'score': 0.5016, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/indium-nitride', 'display_name': 'Indium nitride', 'score': 0.81517386}, {'id': 'https://openalex.org/keywords/characterization', 'display_name': 'Characterization (materials science)', 'score': 0.7265821}, {'id': 'https://openalex.org/keywords/indium-gallium-nitride', 'display_name': 'Indium gallium nitride', 'score': 0.6501454}, {'id': 'https://openalex.org/keywords/nanostructures', 'display_name': 'Nanostructures', 'score': 0.533362}, {'id': 'https://openalex.org/keywords/nanomaterials', 'display_name': 'Nanomaterials', 'score': 0.528615}, {'id': 'https://openalex.org/keywords/iii-nitrides', 'display_name': 'III-Nitrides', 'score': 0.517932}], 'concepts': [{'id': 'https://openalex.org/C2777081994', 'wikidata': 'https://www.wikidata.org/wiki/Q418616', 'display_name': 'Indium nitride', 'level': 4, 'score': 0.81517386}, {'id': 'https://openalex.org/C543292547', 'wikidata': 'https://www.wikidata.org/wiki/Q1094', 'display_name': 'Indium', 'level': 2, 'score': 0.81021965}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.80558664}, {'id': 'https://openalex.org/C2780841128', 'wikidata': 'https://www.wikidata.org/wiki/Q5073781', 'display_name': 'Characterization (materials science)', 'level': 2, 'score': 0.7265821}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.65921175}, {'id': 'https://openalex.org/C2778245067', 'wikidata': 'https://www.wikidata.org/wiki/Q425734', 'display_name': 'Indium gallium nitride', 'level': 4, 'score': 0.6501454}, {'id': 'https://openalex.org/C155672457', 'wikidata': 'https://www.wikidata.org/wiki/Q61231', 'display_name': 'Nanoparticle', 'level': 2, 'score': 0.6249391}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.59664845}, {'id': 'https://openalex.org/C194760766', 'wikidata': 'https://www.wikidata.org/wiki/Q410851', 'display_name': 'Nitride', 'level': 3, 'score': 0.58814526}, {'id': 'https://openalex.org/C550372918', 'wikidata': 'https://www.wikidata.org/wiki/Q861', 'display_name': 'Gallium', 'level': 2, 'score': 0.51895994}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.3331586}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.16385216}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'http://dspace.mit.edu/handle/1721.1/59706', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W645800177', 'https://openalex.org/W3123612009', 'https://openalex.org/W3034270388', 'https://openalex.org/W2998019434', 'https://openalex.org/W2921568931', 'https://openalex.org/W2898490511', 'https://openalex.org/W2801184933', 'https://openalex.org/W2793487327', 'https://openalex.org/W2734872071', 'https://openalex.org/W2584652791', 'https://openalex.org/W2567201293', 'https://openalex.org/W2480899811', 'https://openalex.org/W2310682569', 'https://openalex.org/W2310370598', 'https://openalex.org/W2241879082', 'https://openalex.org/W2195548057', 'https://openalex.org/W2134316386', 'https://openalex.org/W2040773304', 'https://openalex.org/W184656059', 'https://openalex.org/W1475187663'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1624711809', 'counts_by_year': [], 'updated_date': '2024-09-13T23:56:01.534956', 'created_date': '2016-06-24'}