Publication Information

{'id': 'https://openalex.org/W2033641653', 'doi': 'https://doi.org/10.1116/1.586054', 'title': 'Resist etching kinetics and pattern transfer in a helicon plasma', 'display_name': 'Resist etching kinetics and pattern transfer in a helicon plasma', 'publication_year': 1992, 'publication_date': '1992-11-01', 'ids': {'openalex': 'https://openalex.org/W2033641653', 'doi': 'https://doi.org/10.1116/1.586054', 'mag': '2033641653'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1116/1.586054', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4210169477', 'display_name': 'Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena', 'issn_l': '1071-1023', 'issn': ['1071-1023', '1520-8567'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5052052898', 'display_name': 'C. W. Jurgensen', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I1283103587', 'display_name': 'AT&T (United States)', 'ror': 'https://ror.org/02bbd5539', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I1283103587']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'C. W. Jurgensen', 'raw_affiliation_strings': ['AT&T Bell Laboratories, Murray Hill, New Jersey 07974'], 'affiliations': [{'raw_affiliation_string': 'AT&T Bell Laboratories, Murray Hill, New Jersey 07974', 'institution_ids': ['https://openalex.org/I1283103587']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5082377496', 'display_name': 'Richard S. Hutton', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I1283103587', 'display_name': 'AT&T (United States)', 'ror': 'https://ror.org/02bbd5539', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I1283103587']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'R. S. Hutton', 'raw_affiliation_strings': ['AT&T Bell Laboratories, Murray Hill, New Jersey 07974'], 'affiliations': [{'raw_affiliation_string': 'AT&T Bell Laboratories, Murray Hill, New Jersey 07974', 'institution_ids': ['https://openalex.org/I1283103587']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5111941903', 'display_name': 'Gary N. Taylor', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I1283103587', 'display_name': 'AT&T (United States)', 'ror': 'https://ror.org/02bbd5539', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I1283103587']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G. N. Taylor', 'raw_affiliation_strings': ['AT&T Bell Laboratories, Murray Hill, New Jersey 07974'], 'affiliations': [{'raw_affiliation_string': 'AT&T Bell Laboratories, Murray Hill, New Jersey 07974', 'institution_ids': ['https://openalex.org/I1283103587']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 2.361, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 16, 'citation_normalized_percentile': {'value': 0.764874, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 82, 'max': 83}, 'biblio': {'volume': '10', 'issue': '6', 'first_page': '2542', 'last_page': '2547'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T12141', 'display_name': 'Fluid Dynamics and Thin Films', 'score': 0.9975, 'subfield': {'id': 'https://openalex.org/subfields/2206', 'display_name': 'Computational Mechanics'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T12141', 'display_name': 'Fluid Dynamics and Thin Films', 'score': 0.9975, 'subfield': {'id': 'https://openalex.org/subfields/2206', 'display_name': 'Computational Mechanics'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10781', 'display_name': 'Plasma Diagnostics and Applications', 'score': 0.9968, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9954, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/helicon', 'display_name': 'Helicon', 'score': 0.9466131}, {'id': 'https://openalex.org/keywords/dry-etching', 'display_name': 'Dry etching', 'score': 0.62061036}, {'id': 'https://openalex.org/keywords/plasma-etching', 'display_name': 'Plasma Etching', 'score': 0.6058209}, {'id': 'https://openalex.org/keywords/deep-reactive-ion-etching', 'display_name': 'Deep reactive-ion etching', 'score': 0.41965866}], 'concepts': [{'id': 'https://openalex.org/C2779123320', 'wikidata': 'https://www.wikidata.org/wiki/Q4135014', 'display_name': 'Helicon', 'level': 3, 'score': 0.9466131}, {'id': 'https://openalex.org/C160671074', 'wikidata': 'https://www.wikidata.org/wiki/Q267131', 'display_name': 'Wafer', 'level': 2, 'score': 0.81909144}, {'id': 'https://openalex.org/C100460472', 'wikidata': 'https://www.wikidata.org/wiki/Q2368605', 'display_name': 'Etching (microfabrication)', 'level': 3, 'score': 0.818076}, {'id': 'https://openalex.org/C53524968', 'wikidata': 'https://www.wikidata.org/wiki/Q7315582', 'display_name': 'Resist', 'level': 3, 'score': 0.8014563}, {'id': 'https://openalex.org/C130472188', 'wikidata': 'https://www.wikidata.org/wiki/Q1640159', 'display_name': 'Reactive-ion etching', 'level': 4, 'score': 0.7677466}, {'id': 'https://openalex.org/C1291036', 'wikidata': 'https://www.wikidata.org/wiki/Q1191918', 'display_name': 'Dry etching', 'level': 4, 'score': 0.62061036}, {'id': 'https://openalex.org/C107187091', 'wikidata': 'https://www.wikidata.org/wiki/Q2392011', 'display_name': 'Plasma etching', 'level': 4, 'score': 0.6058209}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.5826283}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.48560137}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.47133967}, {'id': 'https://openalex.org/C204223013', 'wikidata': 'https://www.wikidata.org/wiki/Q133036', 'display_name': 'Lithography', 'level': 2, 'score': 0.42102984}, {'id': 'https://openalex.org/C124634506', 'wikidata': 'https://www.wikidata.org/wiki/Q486936', 'display_name': 'Deep reactive-ion etching', 'level': 5, 'score': 0.41965866}, {'id': 'https://openalex.org/C82706917', 'wikidata': 'https://www.wikidata.org/wiki/Q10251', 'display_name': 'Plasma', 'level': 2, 'score': 0.3357104}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.30068502}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.2873583}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.14533767}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C43617362', 'wikidata': 'https://www.wikidata.org/wiki/Q170050', 'display_name': 'Chromatography', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1116/1.586054', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4210169477', 'display_name': 'Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena', 'issn_l': '1071-1023', 'issn': ['1071-1023', '1520-8567'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.54, 'id': 'https://metadata.un.org/sdg/6', 'display_name': 'Clean water and sanitation'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W2765886561', 'https://openalex.org/W2507729704', 'https://openalex.org/W2466887265', 'https://openalex.org/W2360464821', 'https://openalex.org/W2093631838', 'https://openalex.org/W2082133582', 'https://openalex.org/W2045553774', 'https://openalex.org/W2014359839', 'https://openalex.org/W2011001474', 'https://openalex.org/W1504164758'], 'abstract_inverted_index': {'We': [0, 156, 171], 'describe': [1, 157], 'the': [2, 47, 68, 72, 158, 182, 189], 'first': [3], 'commercial': [4], 'etching': [5, 17, 27, 53, 123, 143, 164, 169, 186, 193], 'system': [6, 28, 194], 'based': [7, 175], 'on': [8, 101, 163, 176, 188], 'a': [9, 30, 58, 77, 87, 128, 173], 'helicon': [10, 61, 73], 'ion': [11], 'source': [12], 'and': [13, 70, 76, 86, 97, 140, 168, 208, 215], 'characterize': [14], 'it': [15], 'for': [16, 145], 'organic': [18, 212], 'films': [19], 'in': [20], 'an': [21, 122], 'oxygen': [22], 'plasma.': [23], 'This': [24, 192], 'single': [25], 'wafer': [26], 'achieves': [29], 'throughput': [31, 48, 129], 'of': [32, 49, 125, 148, 160, 185], 'at': [33], 'least': [34], '30': [35], 'fully': [36], 'processed': [37], '5': [38], 'in.': [39], 'wafers': [40], 'per': [41], 'hour,': [42], 'which': [43], 'is': [44, 55, 195], 'comparable': [45], 'to': [46, 66, 92, 111, 138, 153, 198], 'batch': [50], 'reactors.': [51], 'The': [52], 'chamber': [54], 'equipped': [56], 'with': [57, 81], '13.56-MHz': [59], '2500-W': [60], 'source,': [62], 'four': [63], 'low-field': [64], 'magnets': [65], 'shape': [67], 'plasma': [69], 'support': [71], 'wave': [74], 'mode,': [75], '600-W': [78], 'radio-frequency': [79], 'chuck': [80], 'He': [82], 'backside': [83], 'heat': [84], 'exchange': [85], 'temperature': [88], 'range': [89], 'from': [90], '−50': [91], '+125': [93], '°C.': [94], 'Etching': [95], 'rates': [96], 'uniformity': [98], 'were': [99, 109], 'measured': [100], 'unpatterned': [102], 'resist-coated': [103], 'wafers,': [104], 'while': [105], 'trilayer': [106], 'resist': [107], 'patterns': [108], 'used': [110], 'study': [112], 'pattern': [113, 209], 'transfer': [114, 210], 'effects.': [115], 'Under': [116], 'nearly': [117, 141], 'optimum': [118], 'conditions': [119], 'we': [120], 'obtain': [121], 'rate': [124, 187], '1.31': [126], 'μm/min,': [127], '≥30': [130], 'wafers/h,': [131], 'nonuniformity': [132], '≤±': [133], '3%,': [134], 'selectivity': [135], '≊70': [136], 'relative': [137], 'SiO2': [139], 'vertical': [142], 'profiles': [144], 'all': [146], 'types': [147], 'features': [149], 'having': [150], 'dimensions': [151], 'down': [152], '0.25': [154], 'μm.': [155], 'effect': [159], 'process': [161, 190], 'variables': [162], 'rate,': [165], 'uniformity,': [166], 'selectivity,': [167], 'profiles.': [170], 'present': [172], 'model': [174], 'multicomponent': [177], 'adsorption': [178], 'kinetics': [179], 'that': [180], 'fits': [181], 'observed': [183], 'dependence': [184], 'variables.': [191], 'being': [196], 'applied': [197], 'several': [199], 'advanced': [200], 'lithographic': [201], 'schemes': [202], 'including': [203], 'dry-developed': [204], 'resists,': [205], 'bilayer': [206], 'lithography,': [207], 'through': [211], 'antireflective': [213], 'coatings': [214], 'planarizing': [216], 'layers.': [217]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2033641653', 'counts_by_year': [{'year': 2023, 'cited_by_count': 1}], 'updated_date': '2024-12-17T14:16:42.405934', 'created_date': '2016-06-24'}