Title: Carbon Nanotube Transistor Circuits: Circuit-Level Performance Benchmarking and Design Options for Living with Imperfections
Abstract: 1D carbon nanotube FET (CNFET)-based circuits offer 4.6times faster FO4 speed and 12times energy-delay product improvement over 32nm node Si CMOS (including diameter and doping variations), provided circuits can be built that are immune to misaligned and metallic nanotubes. A design technique that guarantees correct logic operation in the presence of misaligned nanotubes is also presented.
Publication Year: 2007
Publication Date: 2007-02-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 144
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