Title: A simple subcircuit extension of the BSIM3v3 model for CMOS RF design
Abstract:An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y...An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped resistors-the only added elements. The non-quasi-static and substrate effects can be modeled with these two resistors to significantly improve the model accuracy up to a frequency of 10 GHz, which is about 70% of the f/sub T/ of the 0.5 /spl mu/m NMOS transistor.Read More
Publication Year: 2000
Publication Date: 2000-04-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 64
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