Analysis of Nonuniformly Doped SOI MOSFETs

Name: Work Video:
Duration: 3 min 30 s
Description: A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET's which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.
P. Paelinck; O. Vancauwenberghe; F. Van de Wiele
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