Title: Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistor
Abstract: The operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities.
Publication Year: 1990
Publication Date: 1990-10-22
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 12
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