Title: 1.5-V Operating fully-depleted amorphous oxide thin film transistors achieved by 63-mV/dec subthreshold slope
Abstract: Thin film transistors (TFTs) with a small subthreshold slope (SS) are urgently required for low-voltage operating circuits on large-area and flexible substrates. Using InGaZnO deposited at room temperature (RT), we achieved 63 mV/dec, the smallest-ever SS reported for oxide semiconductor TFTs. To achieve the small SS as well as small I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> , a fully-depleted off-state was employed by thinning the channel layer to 6 nm. Scalability down to L = 2 mum was confirmed. For V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 0 to 1.5 V operation, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> <10-17 A/mum and on/off ratio > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> were obtained.
Publication Year: 2008
Publication Date: 2008-12-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 33
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot