Title: Structural and Electrical Properties of Metal Silicide Precipitates in Silicon
Abstract: physica status solidi (a)Volume 171, Issue 1 p. 301-310 Original Paper Structural and Electrical Properties of Metal Silicide Precipitates in Silicon M. Seibt, M. Seibt IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorH. Hedemann, H. Hedemann IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorA. A. Istratov, A. A. Istratov IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorF. Riedel, F. Riedel IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorA. Sattler, A. Sattler IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorW. Schröter, W. Schröter IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this author M. Seibt, M. Seibt IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorH. Hedemann, H. Hedemann IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorA. A. Istratov, A. A. Istratov IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorF. Riedel, F. Riedel IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorA. Sattler, A. Sattler IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this authorW. Schröter, W. Schröter IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 13—15, D-37073 Göttingen, GermanySearch for more papers by this author First published: 29 January 1999 https://doi.org/10.1002/(SICI)1521-396X(199901)171:1<301::AID-PSSA301>3.0.CO;2-PCitations: 67AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract This paper summarizes current understanding of structural and electronic properties of metal silicide precipitates in silicon and their interrelation. Combined studies of high-resolution transmission electron microscopy and deep level transient spectroscopy together with numerical simulations show that the bounding dislocation of nickel silicide platelets is the key to understand their rapid growth and electrical properties. Different misfit relaxation phenomena govern the structural evolution of copper silicide precipitates from their early stages to the well-known colony growth. This evolution involves different types of secondary defects indicating that the deep band-like states observed throughout this process are associated with the silicide precipitates themselves. References 1 E. R. Weber, Appl. Phys. A 30, 1 (1983). 2 W. Schröter, M. Seibt, and D. Gilles, in: Materials Science and Technology, Vol. 4, Eds. R. W. Cahn, P. Haasen, and E. Kramer, W. Schröter (volume editor), VCH Weinheim 1991 (p. 539). 3 W. Schröter and M. Seibt, in: Properties of Crystalline Silicon, EMIS Datareview, in press. 4 A. A. Istratov, C. Flink, H. 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Seibt, and W. Schröter, Solid State Phenom., in press. 34 G. Schoeck, Czech. J. Phys. 45, 991 (1995). 35 M. Khanta, D. P. Pope, and V. Vitek, Phys. Rev. Lett. 73, 684 (1994). Citing Literature Volume171, Issue1January 1999Pages 301-310 ReferencesRelatedInformation
Publication Year: 1999
Publication Date: 1999-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 79
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