Title: A Novel CMOS Low Noise Amplifier for UWB Application
Abstract: This paper presents the design of a CMOS variable gain low noise amplifier used for ultra wideband applications. A current reuse technique is applied to the resistive feedback amplifier to widen the gain tuning range. A common source amplifier is cascoded to achieve high gain and gain controllability. The LNA is designed to operate at 1.4V supply voltage and is implemented in TSMC 0.18μm CMOS technology. The power gain of the LNA is 22±5 dB and the noise figure varies from 3.5 to 4.8 within the bandwidth from 3 to 9 GHz. The power gain (S21) is obtained more than 10dB and the reverse isolation (S12) is below-22dB.
Publication Year: 2012
Publication Date: 2012-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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