Publication Information

{'id': 'https://openalex.org/W1977925078', 'doi': 'https://doi.org/10.1109/icsict.2006.306056', 'title': 'Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress', 'display_name': 'Ultrathin Oxynitride p-MOSFET Recovery Characteristics under NBTI Stress', 'publication_year': 2006, 'publication_date': '2006-01-01', 'ids': {'openalex': 'https://openalex.org/W1977925078', 'doi': 'https://doi.org/10.1109/icsict.2006.306056', 'mag': '1977925078'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/icsict.2006.306056', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5081603207', 'display_name': 'Yandong He', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I20231570', 'display_name': 'Peking University', 'ror': 'https://ror.org/02v51f717', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I20231570']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Yandong He', 'raw_affiliation_strings': ['Inst. of Microelectron., Peking Univ., Beijing'], 'affiliations': [{'raw_affiliation_string': 'Inst. of Microelectron., Peking Univ., Beijing', 'institution_ids': ['https://openalex.org/I20231570']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5028367322', 'display_name': 'Mingzhen Xu', 'orcid': 'https://orcid.org/0000-0002-4587-7581'}, 'institutions': [{'id': 'https://openalex.org/I20231570', 'display_name': 'Peking University', 'ror': 'https://ror.org/02v51f717', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I20231570']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Mingzhen Xu', 'raw_affiliation_strings': ['Inst. of Microelectron., Peking Univ., Beijing'], 'affiliations': [{'raw_affiliation_string': 'Inst. of Microelectron., Peking Univ., Beijing', 'institution_ids': ['https://openalex.org/I20231570']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5111773393', 'display_name': 'Changhua Tan', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I20231570', 'display_name': 'Peking University', 'ror': 'https://ror.org/02v51f717', 'country_code': 'CN', 'type': 'education', 'lineage': ['https://openalex.org/I20231570']}], 'countries': ['CN'], 'is_corresponding': False, 'raw_author_name': 'Changhua Tan', 'raw_affiliation_strings': ['Inst. of Microelectron., Peking Univ., Beijing'], 'affiliations': [{'raw_affiliation_string': 'Inst. of Microelectron., Peking Univ., Beijing', 'institution_ids': ['https://openalex.org/I20231570']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 61}, 'biblio': {'volume': '83', 'issue': None, 'first_page': '1141', 'last_page': '1143'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Advancements in Semiconductor Devices and Circuit Design', 'score': 0.9993, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12808', 'display_name': 'Ferroelectric and Negative Capacitance Devices', 'score': 0.9988, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/negative-bias-temperature-instability', 'display_name': 'Negative-bias temperature instability', 'score': 0.7278805}, {'id': 'https://openalex.org/keywords/stress-relaxation', 'display_name': 'Stress relaxation', 'score': 0.63032496}, {'id': 'https://openalex.org/keywords/silc', 'display_name': 'SILC', 'score': 0.529319}, {'id': 'https://openalex.org/keywords/high-κ-dielectric', 'display_name': 'High-κ dielectric', 'score': 0.45567685}, {'id': 'https://openalex.org/keywords/leakage', 'display_name': 'Leakage (economics)', 'score': 0.43626714}], 'concepts': [{'id': 'https://openalex.org/C557185', 'wikidata': 'https://www.wikidata.org/wiki/Q6987194', 'display_name': 'Negative-bias temperature instability', 'level': 5, 'score': 0.7278805}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.64642316}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.63644314}, {'id': 'https://openalex.org/C202974441', 'wikidata': 'https://www.wikidata.org/wiki/Q2576844', 'display_name': 'Stress relaxation', 'level': 3, 'score': 0.63032496}, {'id': 'https://openalex.org/C2776029896', 'wikidata': 'https://www.wikidata.org/wiki/Q3935810', 'display_name': 'Relaxation (psychology)', 'level': 2, 'score': 0.580829}, {'id': 'https://openalex.org/C21036866', 'wikidata': 'https://www.wikidata.org/wiki/Q181767', 'display_name': 'Stress (linguistics)', 'level': 2, 'score': 0.55448955}, {'id': 'https://openalex.org/C86642149', 'wikidata': 'https://www.wikidata.org/wiki/Q7390375', 'display_name': 'SILC', 'level': 3, 'score': 0.529319}, {'id': 'https://openalex.org/C16317505', 'wikidata': 'https://www.wikidata.org/wiki/Q132013', 'display_name': 'High-κ dielectric', 'level': 3, 'score': 0.45567685}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.44630805}, {'id': 'https://openalex.org/C2777042071', 'wikidata': 'https://www.wikidata.org/wiki/Q6509304', 'display_name': 'Leakage (economics)', 'level': 2, 'score': 0.43626714}, {'id': 'https://openalex.org/C2361726', 'wikidata': 'https://www.wikidata.org/wiki/Q5527031', 'display_name': 'Gate oxide', 'level': 4, 'score': 0.41341195}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.38806894}, {'id': 'https://openalex.org/C26873012', 'wikidata': 'https://www.wikidata.org/wiki/Q214781', 'display_name': 'Condensed matter physics', 'level': 1, 'score': 0.3769483}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.35462797}, {'id': 'https://openalex.org/C113196181', 'wikidata': 'https://www.wikidata.org/wiki/Q485223', 'display_name': 'Analytical Chemistry (journal)', 'level': 2, 'score': 0.3378068}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.28048837}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.21189913}, {'id': 'https://openalex.org/C185592680', 'wikidata': 'https://www.wikidata.org/wiki/Q2329', 'display_name': 'Chemistry', 'level': 0, 'score': 0.20760229}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.120043874}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.105532646}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.09606108}, {'id': 'https://openalex.org/C15744967', 'wikidata': 'https://www.wikidata.org/wiki/Q9418', 'display_name': 'Psychology', 'level': 0, 'score': 0.08533859}, {'id': 'https://openalex.org/C43617362', 'wikidata': 'https://www.wikidata.org/wiki/Q170050', 'display_name': 'Chromatography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C138885662', 'wikidata': 'https://www.wikidata.org/wiki/Q5891', 'display_name': 'Philosophy', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C149912024', 'wikidata': 'https://www.wikidata.org/wiki/Q462188', 'display_name': 'Creep', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C120398109', 'wikidata': 'https://www.wikidata.org/wiki/Q175751', 'display_name': 'Quantum tunnelling', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C139719470', 'wikidata': 'https://www.wikidata.org/wiki/Q39680', 'display_name': 'Macroeconomics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C41895202', 'wikidata': 'https://www.wikidata.org/wiki/Q8162', 'display_name': 'Linguistics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C77805123', 'wikidata': 'https://www.wikidata.org/wiki/Q161272', 'display_name': 'Social psychology', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C162324750', 'wikidata': 'https://www.wikidata.org/wiki/Q8134', 'display_name': 'Economics', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/icsict.2006.306056', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 5, 'referenced_works': ['https://openalex.org/W1600332626', 'https://openalex.org/W2047910845', 'https://openalex.org/W2062874667', 'https://openalex.org/W2134098010', 'https://openalex.org/W4292926174'], 'related_works': ['https://openalex.org/W4251942101', 'https://openalex.org/W2533468154', 'https://openalex.org/W2146236325', 'https://openalex.org/W2141353850', 'https://openalex.org/W2132779228', 'https://openalex.org/W2127871570', 'https://openalex.org/W2099724046', 'https://openalex.org/W2090587624', 'https://openalex.org/W1927997555', 'https://openalex.org/W1914161829'], 'abstract_inverted_index': {'The': [0, 26, 64, 95], 'impact': [1], 'of': [2, 10, 38, 66], 'stress': [3, 20, 59, 77], 'and': [4, 35, 55, 78, 99], 'recovery': [5, 9, 79, 93, 116], 'condition': [6], 'on': [7, 91], 'the': [8, 36, 49, 67, 76, 88, 100, 106, 111], 'an': [11, 83], 'ultrathin': [12], 'oxynitride': [13], 'p-MOSFET': [14], 'under': [15, 70], 'negative-bias': [16], 'temperature': [17], 'instability': [18], '(NBTI)': [19], 'was': [21, 46], 'investigated': [22], 'in': [23, 75, 114], 'this': [24], 'paper.': [25], 'positive': [27, 71], 'SiO': [28], '<sub': [29, 40], 'xmlns:mml="http://www.w3.org/1998/Math/MathML"': [30, 41], 'xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>': [31], 'bulk': [32], 'trap': [33, 108], 'detrapping': [34], 'relaxation': [37, 69, 109], 'Si/SiO': [39], 'xmlns:xlink="http://www.w3.org/1999/xlink">2': [42], '</sub>': [43], 'interface': [44], 'state': [45], 'studied': [47], 'through': [48], 'single': [50], 'point': [51], 'Idlin': [52], '(drain': [53], 'current)': [54, 62], 'NFBSILC': [56], '(near': [57], 'flat-band': [58], 'induced': [60], 'leakage': [61], 'measurement.': [63], 'observation': [65], 'enhanced': [68], 'gate': [72], 'bias': [73], 'both': [74], 'stages,': [80], 'which': [81], 'play': [82], 'important': [84], 'role': [85], 'to': [86], 'clarify': [87], 'existing': [89], 'viewpoint': [90], 'NBTI': [92, 115], 'characteristics.': [94], 'different': [96], 'recharging': [97], 'behavior': [98], 'substrate': [101], 'voltage': [102], 'dependence': [103], 'reconfirm': [104], 'that': [105], 'oxide': [107], 'is': [110], 'major': [112], 'component': [113], 'stage': [117]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1977925078', 'counts_by_year': [], 'updated_date': '2024-12-24T15:59:35.955815', 'created_date': '2016-06-24'}