Title: Theory of dopant diffusion assuming nondilute concentrations of dopant-defect pairs
Abstract:Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a...Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption. A new derivation of the dopant and defect equations is presented which is valid for any concentration of dopant-defect pairs.Read More
Publication Year: 1991
Publication Date: 1991-12-23
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 15
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