Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

Name: Work Video:
Duration: 3 min 30 s
Description: It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.
M. C. Tamargo; G. F. Neumark
{'id': 'https://openalex.org/W110584757', 'doi': 'https://doi.org/10.2172/824891', 'title': 'Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report', 'display_name': 'Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report', 'publication_year': 2004, 'publication_date': '2004-04-19', 'ids': {'openalex': 'https://openalex.org/W110584757', 'doi': 'https://doi.org/10.2172/824891', 'mag': '110584757'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.2172/824891', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'report', 'type_crossref': 'report', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'green', 'oa_url': 'https://www.osti.gov/biblio/824891', 'any_repository_has_fulltext': True}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5003920548', 'display_name': 'M. C. Tamargo', 'orcid': 'https://orcid.org/0000-0002-2991-2674'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'M C Tamargo', 'raw_affiliation_strings': ['Department of Energy Chicago Operations Ofice 9800 South Cass Avenue Afgonne, Illinois 60439'], 'affiliations': [{'raw_affiliation_string': 'Department of Energy Chicago Operations Ofice 9800 South Cass Avenue Afgonne, Illinois 60439', 'institution_ids': []}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5019754176', 'display_name': 'G. F. Neumark', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I78577930', 'display_name': 'Columbia University', 'ror': 'https://ror.org/00hj8s172', 'country_code': 'US', 'type': 'education', 'lineage': ['https://openalex.org/I78577930']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G F Neumark', 'raw_affiliation_strings': ['Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027'], 'affiliations': [{'raw_affiliation_string': 'Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027', 'institution_ids': ['https://openalex.org/I78577930']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': None, 'has_fulltext': True, 'fulltext_origin': 'pdf', 'cited_by_count': 0, 'citation_normalized_percentile': {'value': 0.0, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 0, 'max': 61}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9689, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9689, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11723', 'display_name': 'Optical Coatings and Gratings', 'score': 0.9418, 'subfield': {'id': 'https://openalex.org/subfields/2508', 'display_name': 'Surfaces, Coatings and Films'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12529', 'display_name': 'Ga2O3 and related materials', 'score': 0.9233, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.4171319}], 'concepts': [{'id': 'https://openalex.org/C191952053', 'wikidata': 'https://www.wikidata.org/wiki/Q15119237', 'display_name': 'Dopant', 'level': 3, 'score': 0.94469905}, {'id': 'https://openalex.org/C57863236', 'wikidata': 'https://www.wikidata.org/wiki/Q1130571', 'display_name': 'Doping', 'level': 2, 'score': 0.8735231}, {'id': 'https://openalex.org/C3792809', 'wikidata': 'https://www.wikidata.org/wiki/Q898542', 'display_name': 'Molecular beam epitaxy', 'level': 4, 'score': 0.8010973}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.66030455}, {'id': 'https://openalex.org/C181966813', 'wikidata': 'https://www.wikidata.org/wiki/Q806352', 'display_name': 'Band gap', 'level': 2, 'score': 0.62435305}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.55985177}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.5147512}, {'id': 'https://openalex.org/C110738630', 'wikidata': 'https://www.wikidata.org/wiki/Q1135540', 'display_name': 'Epitaxy', 'level': 3, 'score': 0.4710871}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.4171319}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.38099465}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.3588872}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.11439133}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}], 'mesh': [], 'locations_count': 3, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.2172/824891', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, {'is_oa': True, 'landing_page_url': 'https://www.osti.gov/biblio/824891', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306402487', 'display_name': 'OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I139351228', 'host_organization_name': 'Office of Scientific and Technical Information', 'host_organization_lineage': ['https://openalex.org/I139351228'], 'host_organization_lineage_names': ['Office of Scientific and Technical Information'], 'type': 'repository'}, 'license': 'other-oa', 'license_id': 'https://openalex.org/licenses/other-oa', 'version': 'submittedVersion', 'is_accepted': False, 'is_published': False}, {'is_oa': True, 'landing_page_url': 'https://digital.library.unt.edu/ark:/67531/metadc782829/', 'pdf_url': 'https://digital.library.unt.edu/ark:/67531/metadc782829/m2/1/high_res_d/824891.pdf', 'source': {'id': 'https://openalex.org/S4306400792', 'display_name': 'University of North Texas Digital Library (University of North Texas)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I123534392', 'host_organization_name': 'University of North Texas', 'host_organization_lineage': ['https://openalex.org/I123534392'], 'host_organization_lineage_names': ['University of North Texas'], 'type': 'repository'}, 'license': None, 'license_id': None, 'version': 'submittedVersion', 'is_accepted': False, 'is_published': False}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://www.osti.gov/biblio/824891', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306402487', 'display_name': 'OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I139351228', 'host_organization_name': 'Office of Scientific and Technical Information', 'host_organization_lineage': ['https://openalex.org/I139351228'], 'host_organization_lineage_names': ['Office of Scientific and Technical Information'], 'type': 'repository'}, 'license': 'other-oa', 'license_id': 'https://openalex.org/licenses/other-oa', 'version': 'submittedVersion', 'is_accepted': False, 'is_published': False}, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 17, 'referenced_works': ['https://openalex.org/W1973469483', 'https://openalex.org/W1981769021', 'https://openalex.org/W1992035236', 'https://openalex.org/W2001141773', 'https://openalex.org/W2002824075', 'https://openalex.org/W2009184443', 'https://openalex.org/W2011636599', 'https://openalex.org/W2012173194', 'https://openalex.org/W2016766088', 'https://openalex.org/W2029516786', 'https://openalex.org/W2038589812', 'https://openalex.org/W2061170931', 'https://openalex.org/W2065582295', 'https://openalex.org/W2069839808', 'https://openalex.org/W2072638968', 'https://openalex.org/W2091674524', 'https://openalex.org/W2119282685'], 'related_works': ['https://openalex.org/W2971787059', 'https://openalex.org/W2232108758', 'https://openalex.org/W2182816670', 'https://openalex.org/W2066297090', 'https://openalex.org/W2022009904', 'https://openalex.org/W1998144789', 'https://openalex.org/W1983308728', 'https://openalex.org/W1965628557', 'https://openalex.org/W1669677816', 'https://openalex.org/W122050100'], 'abstract_inverted_index': {'It': [0], 'is': [1], 'well': [2], 'known': [3], 'that': [4], 'it': [5], 'has': [6], 'been': [7], 'difficult': [8], 'to': [9, 35], 'obtain': [10], 'good': [11], 'bipolar': [12], 'doping': [13, 22], 'in': [14], 'a': [15, 20, 27, 32], 'wide': [16], 'bandgap': [17], 'semiconductors.': [18], 'Developed': [19], 'new': [21], 'technique,': [23], 'involving': [24], 'use': [25], 'of': [26, 39], 'standard': [28], 'dopant,': [29, 41], 'together': [30], 'with': [31], "''co-dopant''": [33], 'used': [34], 'facilitate': [36], 'the': [37, 40], 'introduction': [38], 'and': [42], 'have': [43], 'vastly': [44], 'alleviated': [45], 'this': [46], 'problem.': [47]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W110584757', 'counts_by_year': [], 'updated_date': '2024-12-14T15:47:55.896729', 'created_date': '2016-06-24'}
Publication Information

Basic Information

Access and Citation

AI Researcher Chatbot

Primary Location

Authors

Topics

Keywords

Related Works
