Title: Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Abstract: The purpose of this paper is to understand metal/germanium (Ge) junction characteristics. Electrode metals with a wide work function range were deposited on Ge. All metal/p-Ge and metal/n-Ge junctions have shown Ohmic and Schottky characteristics, respectively, with the strong Fermi-level pinning. The charge neutrality level (CNL) at metal/Ge interface is close to the branch point calculated for the bulk Ge. Moreover, the pinning level is hardly modulated by annealing in forming gas, forming metal-germanide/Ge interfaces or changing the substrate orientation. These results suggest that Fermi level at metal/Ge interface is intrinsically pinned at the CNL characterized by the metal-induced gap states model.
Publication Year: 2007
Publication Date: 2007-09-17
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 435
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