Title: Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
Abstract: Surface leakage current is a significant source of dark current in conventional narrow-gap p-n junction photodetectors. It is shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents. The result is a measured dark current lower by over six orders of magnitude than that of the InAs p-n photodetector for device temperatures of 140 K.
Publication Year: 2008
Publication Date: 2008-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 71
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