Title: Effect of interdiffusion on dark current response of GaInP/GaAs quantum well infrared photodetectors
Abstract:The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier conf...The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved.Read More
Publication Year: 1999
Publication Date: 1999-09-16
Language: en
Type: article
Indexed In: ['crossref']
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