Publication Information

{'id': 'https://openalex.org/W1964226194', 'doi': 'https://doi.org/10.1109/ted.2013.2266663', 'title': 'Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs', 'display_name': 'Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs', 'publication_year': 2013, 'publication_date': '2013-07-09', 'ids': {'openalex': 'https://openalex.org/W1964226194', 'doi': 'https://doi.org/10.1109/ted.2013.2266663', 'mag': '1964226194'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/ted.2013.2266663', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S162355128', 'display_name': 'IEEE Transactions on Electron Devices', 'issn_l': '0018-9383', 'issn': ['0018-9383', '1557-9646'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'green', 'oa_url': 'https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/53666/1/Ohi_et_al_IEEE_TED.pdf', 'any_repository_has_fulltext': True}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5090354562', 'display_name': 'Kota Ohi', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I205349734', 'display_name': 'Hokkaido University', 'ror': 'https://ror.org/02e16g702', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I205349734']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Kota Ohi', 'raw_affiliation_strings': ['Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan'], 'affiliations': [{'raw_affiliation_string': 'Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan', 'institution_ids': ['https://openalex.org/I205349734']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5051727678', 'display_name': 'Joel T. Asubar', 'orcid': 'https://orcid.org/0000-0002-1829-4129'}, 'institutions': [{'id': 'https://openalex.org/I205349734', 'display_name': 'Hokkaido University', 'ror': 'https://ror.org/02e16g702', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I205349734']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Joel Tacla Asubar', 'raw_affiliation_strings': ['Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan'], 'affiliations': [{'raw_affiliation_string': 'Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan', 'institution_ids': ['https://openalex.org/I205349734']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5035232733', 'display_name': 'Kenya Nishiguchi', 'orcid': 'https://orcid.org/0000-0002-5512-0005'}, 'institutions': [{'id': 'https://openalex.org/I205349734', 'display_name': 'Hokkaido University', 'ror': 'https://ror.org/02e16g702', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I205349734']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Kenya Nishiguchi', 'raw_affiliation_strings': ['Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan'], 'affiliations': [{'raw_affiliation_string': 'Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan', 'institution_ids': ['https://openalex.org/I205349734']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5109801930', 'display_name': 'Tamotsu Hashizume', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I205349734', 'display_name': 'Hokkaido University', 'ror': 'https://ror.org/02e16g702', 'country_code': 'JP', 'type': 'education', 'lineage': ['https://openalex.org/I205349734']}], 'countries': ['JP'], 'is_corresponding': False, 'raw_author_name': 'Tamotsu Hashizume', 'raw_affiliation_strings': ['Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan'], 'affiliations': [{'raw_affiliation_string': 'Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan', 'institution_ids': ['https://openalex.org/I205349734']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 3.543, 'has_fulltext': True, 'fulltext_origin': 'pdf', 'cited_by_count': 82, 'citation_normalized_percentile': {'value': 0.999829, 'is_in_top_1_percent': True, 'is_in_top_10_percent': True}, 'cited_by_percentile_year': {'min': 97, 'max': 98}, 'biblio': {'volume': '60', 'issue': '10', 'first_page': '2997', 'last_page': '3004'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12529', 'display_name': 'Ga2O3 and related materials', 'score': 0.9992, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10090', 'display_name': 'ZnO doping and properties', 'score': 0.995, 'subfield': {'id': 'https://openalex.org/subfields/2505', 'display_name': 'Materials Chemistry'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/transconductance', 'display_name': 'Transconductance', 'score': 0.5263128}, {'id': 'https://openalex.org/keywords/subthreshold-conduction', 'display_name': 'Subthreshold conduction', 'score': 0.46171188}], 'concepts': [{'id': 'https://openalex.org/C162057924', 'wikidata': 'https://www.wikidata.org/wiki/Q1617706', 'display_name': 'High-electron-mobility transistor', 'level': 4, 'score': 0.8707236}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.71173954}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.7029289}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.5474003}, {'id': 'https://openalex.org/C2779283907', 'wikidata': 'https://www.wikidata.org/wiki/Q1632964', 'display_name': 'Transconductance', 'level': 4, 'score': 0.5263128}, {'id': 'https://openalex.org/C134786449', 'wikidata': 'https://www.wikidata.org/wiki/Q3391255', 'display_name': 'Planar', 'level': 2, 'score': 0.47458148}, {'id': 'https://openalex.org/C195370968', 'wikidata': 'https://www.wikidata.org/wiki/Q1754002', 'display_name': 'Threshold voltage', 'level': 4, 'score': 0.46353295}, {'id': 'https://openalex.org/C156465305', 'wikidata': 'https://www.wikidata.org/wiki/Q1658601', 'display_name': 'Subthreshold conduction', 'level': 4, 'score': 0.46171188}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.43845972}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.37302768}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.36098146}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.20764953}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.13122407}, {'id': 'https://openalex.org/C41008148', 'wikidata': 'https://www.wikidata.org/wiki/Q21198', 'display_name': 'Computer science', 'level': 0, 'score': 0.12515381}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.09121296}, {'id': 'https://openalex.org/C121684516', 'wikidata': 'https://www.wikidata.org/wiki/Q7600677', 'display_name': 'Computer graphics (images)', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 2, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/ted.2013.2266663', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S162355128', 'display_name': 'IEEE Transactions on Electron Devices', 'issn_l': '0018-9383', 'issn': ['0018-9383', '1557-9646'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, {'is_oa': True, 'landing_page_url': 'https://hdl.handle.net/2115/53666', 'pdf_url': 'https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/53666/1/Ohi_et_al_IEEE_TED.pdf', 'source': {'id': 'https://openalex.org/S4306400549', 'display_name': 'Hokkaido University Collection of Scholarly and Academic Papers (Hokkaido University)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I205349734', 'host_organization_name': 'Hokkaido University', 'host_organization_lineage': ['https://openalex.org/I205349734'], 'host_organization_lineage_names': ['Hokkaido University'], 'type': 'repository'}, 'license': 'other-oa', 'license_id': 'https://openalex.org/licenses/other-oa', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://hdl.handle.net/2115/53666', 'pdf_url': 'https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/53666/1/Ohi_et_al_IEEE_TED.pdf', 'source': {'id': 'https://openalex.org/S4306400549', 'display_name': 'Hokkaido University Collection of Scholarly and Academic Papers (Hokkaido University)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I205349734', 'host_organization_name': 'Hokkaido University', 'host_organization_lineage': ['https://openalex.org/I205349734'], 'host_organization_lineage_names': ['Hokkaido University'], 'type': 'repository'}, 'license': 'other-oa', 'license_id': 'https://openalex.org/licenses/other-oa', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 42, 'referenced_works': ['https://openalex.org/W1870746368', 'https://openalex.org/W1968385099', 'https://openalex.org/W1975270339', 'https://openalex.org/W1976072495', 'https://openalex.org/W1994370538', 'https://openalex.org/W1994602855', 'https://openalex.org/W2014479463', 'https://openalex.org/W2017114158', 'https://openalex.org/W2017429679', 'https://openalex.org/W2023169133', 'https://openalex.org/W2029354491', 'https://openalex.org/W2034053061', 'https://openalex.org/W2034386826', 'https://openalex.org/W2041457113', 'https://openalex.org/W2041714088', 'https://openalex.org/W2062818987', 'https://openalex.org/W2071153791', 'https://openalex.org/W2076673580', 'https://openalex.org/W2091454449', 'https://openalex.org/W2091613466', 'https://openalex.org/W2092976228', 'https://openalex.org/W2103119574', 'https://openalex.org/W2108033831', 'https://openalex.org/W2109228515', 'https://openalex.org/W2109541456', 'https://openalex.org/W2110618548', 'https://openalex.org/W2111051464', 'https://openalex.org/W2112559006', 'https://openalex.org/W2126958076', 'https://openalex.org/W2134931326', 'https://openalex.org/W2137778525', 'https://openalex.org/W2141966815', 'https://openalex.org/W2149151998', 'https://openalex.org/W2156325576', 'https://openalex.org/W2159764454', 'https://openalex.org/W2160833768', 'https://openalex.org/W2170893801', 'https://openalex.org/W2172238407', 'https://openalex.org/W2226770135', 'https://openalex.org/W2257088358', 'https://openalex.org/W2289399853', 'https://openalex.org/W4237772584'], 'related_works': ['https://openalex.org/W4242195200', 'https://openalex.org/W3158277807', 'https://openalex.org/W3126073919', 'https://openalex.org/W3063337879', 'https://openalex.org/W2389330181', 'https://openalex.org/W2249766267', 'https://openalex.org/W2102640583', 'https://openalex.org/W2066729282', 'https://openalex.org/W2030723586', 'https://openalex.org/W1964679965'], 'abstract_inverted_index': {'We': [0], 'develop': [1], 'and': [2, 37, 59], 'characterize': [3], 'multi-mesa-channel': [4], '(MMC)': [5], 'AlGaN/GaN': [6], 'high-electron': [7], 'mobility': [8], 'transistors': [9], '(HEMTs),': [10], 'in': [11, 27, 32, 89], 'which': [12], 'a': [13, 33, 38, 55, 60, 116], 'periodic': [14], 'trench': [15], 'structure': [16, 30], 'is': [17, 113], 'fabricated': [18], 'only': [19], 'under': [20], 'the': [21, 28, 45, 51, 71, 79, 93, 98, 103, 109, 125, 129], 'gate': [22], 'electrode.': [23], 'A': [24], 'surrounding-field': [25], 'effect': [26], 'MMC': [29, 52, 80, 94, 130], 'results': [31], 'shallower': [34], 'threshold': [35], 'voltage': [36, 58], 'smaller': [39], 'subthreshold': [40], 'slope': [41], 'than': [42], 'those': [43], 'of': [44, 63, 92, 105, 119, 128], 'standard': [46], 'planar-type': [47], 'HEMT.': [48, 131], 'In': [49], 'addition,': [50], 'HEMT': [53, 81], 'shows': [54], 'low': [56, 83], 'knee': [57], 'weak': [61], 'dependence': [62], 'on-resistance': [64], '(R': [65], '<sub': [66], 'xmlns:mml="http://www.w3.org/1998/Math/MathML"': [67], 'xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>': [68], ')': [69], 'on': [70, 108], 'gate-drain': [72], 'distance.': [73], 'Following': [74], 'identical': [75], 'off-state': [76], 'bias': [77], 'stress,': [78], 'exhibits': [82], 'current': [84, 126], 'collapse.': [85], 'The': [86], 'relative': [87], 'decrease': [88], 'access': [90, 106], 'resistance': [91, 107], 'device': [95, 100], 'compared': [96], 'with': [97], 'planar': [99], 'can': [101], 'reduce': [102], 'effects': [104], 'drain': [110], 'current.': [111], 'It': [112], 'likely': [114], 'that': [115], 'high': [117], 'impedance': [118], 'each': [120], 'nanochannel': [121], 'also': [122], 'contributes': [123], 'to': [124], 'stability': [127]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1964226194', 'counts_by_year': [{'year': 2024, 'cited_by_count': 2}, {'year': 2023, 'cited_by_count': 4}, {'year': 2022, 'cited_by_count': 4}, {'year': 2021, 'cited_by_count': 11}, {'year': 2020, 'cited_by_count': 9}, {'year': 2019, 'cited_by_count': 15}, {'year': 2018, 'cited_by_count': 10}, {'year': 2017, 'cited_by_count': 8}, {'year': 2016, 'cited_by_count': 10}, {'year': 2015, 'cited_by_count': 4}, {'year': 2014, 'cited_by_count': 4}, {'year': 2013, 'cited_by_count': 1}], 'updated_date': '2024-12-14T08:25:07.147595', 'created_date': '2016-06-24'}