Tamotsu Hashizume - AILBRY

Results for 'Tamotsu Hashizume' :

Control of InAs Nanowire Growth Directions on Si

Publication Year: 2008

DOI: https://doi.org/10.1021/nl802398j

Abstract:

Authors:
- Katsuhiro Tomioka
- Junichi Motohisa
- Shinjiro Hara
- Takashi Fukui
Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Publication Year: 2003

DOI: https://doi.org/10.1063/1.1616648

Abstract:

Authors:
- Tamotsu Hashizume
- Shinya Ootomo
- Hideki Hasegawa
Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

Publication Year: 2002

DOI: https://doi.org/10.1063/1.1485309

Abstract:

Authors:
- Tamotsu Hashizume
- Ryusuke Nakasaki
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping

Publication Year: 2012

DOI: https://doi.org/10.1063/1.4711035

Abstract:

Authors:
- Shaharin Fadzli Abd Rahman
- Seiya Kasai
- Abdul Manaf Hashim
Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

Publication Year: 2013

DOI: https://doi.org/10.1021/nl402447h

Abstract:

Authors:
- Katsuhiro Tomioka
- Masatoshi Yoshimura
- Takashi Fukui
Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application

Publication Year: 2015

DOI: https://doi.org/10.1021/acs.nanolett.5b02165

Abstract:

Authors:
- Katsuhiro Tomioka
- Fumiya Izhizaka
- Takashi Fukui
Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

Publication Year: 2016

DOI: https://doi.org/10.7567/apex.9.121002

Abstract:

Authors:
- Kexiong Zhang
- Meiyong Liao
- Masataka Imura
- Toshihide Nabatame
- Akihiko Ohi
- Masatomo Sumiya
- Yasuo Koide
- Liwen Sang
Study on capacitance–voltage characteristics of diamond field-effect transistors with NO2 hole doping and Al2O3 gate insulator layer

Publication Year: 2016

DOI: https://doi.org/10.7567/jjap.55.041301

Abstract:

Authors:
- Makoto Kasu
- Kazuyuki Hirama
- Kazuya Harada
- Toshiyuki Oishi
Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Publication Year: 2007

DOI: https://doi.org/10.1063/1.2711374

Abstract:

Authors:
- Tatsuya Nakamura
- Seiya Kasai
- Yuta Shiratori
- Tamotsu Hashizume
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Publication Year: 2017

DOI: https://doi.org/10.7567/jjap.56.091003

Abstract:

Authors:
- Satoshi Nakazawa
- Nanako Shiozaki
- Noboru Negoro
- Naohiro Tsurumi
- Yoshiharu Anda
- Masahiro Ishida
- Tetsuzo Ueda
Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis

Publication Year: 2018

DOI: https://doi.org/10.1016/j.diamond.2018.12.017

Abstract:

Authors:
- Niloy Chandra Saha
- Makoto Kasu
Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Publication Year: 2017

DOI: https://doi.org/10.1063/1.4986482

Abstract:

Authors:
- Maciej Matys
- R. Stoklas
- M. Blaho
- B. Adamowicz
Novel Hybrid Voltage Controlled Ring Oscillators Using Single Electron and MOS Transistors

Publication Year: 2007

DOI: https://doi.org/10.1109/tnano.2007.891817

Abstract:

Authors:
- Wan-Cheng Zhang
- Nanjian Wu
- Tamotsu Hashizume
- Seiya Kasai
Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy

Publication Year: 2001

DOI: https://doi.org/10.1063/1.1366648

Abstract:

Authors:
- Tamotsu Hashizume
- Toshiya Saitoh
Ceramics for environmental and energy applications II

Publication Year: 2014

DOI: DOI not available

Abstract:

Authors:
- Fatih Doğan
- Terry M. Tritt
- Tohru Sekino
- Yutai Katoh
- Aleksander J. Pyzik
- Ilias Belharouak
- Aldo R. Boccaccını
- James C. Marra

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Results for 'Tamotsu Hashizume' :

Control of InAs Nanowire Growth Directions on Si

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping

Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub> as gate dielectric

Study on capacitance–voltage characteristics of diamond field-effect transistors with NO<sub>2</sub> hole doping and Al<sub>2</sub>O<sub>3</sub> gate insulator layer

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis

Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Novel Hybrid Voltage Controlled Ring Oscillators Using Single Electron and MOS Transistors

Natural oxides on air-exposed and chemically treated InGaP surfaces grown by metalorganic vapor phase epitaxy

Ceramics for environmental and energy applications II

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