Title: The effect of multisubstitution on the thermoelectric properties of chalcogenide-based Cu<sub>2.1</sub>Zn<sub>0.9</sub>Sn<sub>1−<i>x</i></sub>In<sub><i>x</i></sub>Se<sub>4</sub>(0 ≤ <i>x</i> ≤ 0.1)
Abstract: physica status solidi (a)Volume 210, Issue 11 p. 2471-2478 Original Paper The effect of multisubstitution on the thermoelectric properties of chalcogenide-based Cu2.1Zn0.9Sn1−xInxSe4 (0 ≤ x ≤ 0.1) Raju Chetty, Raju Chetty Department of Physics, Indian Institute of Science, Bangalore, 560012 IndiaSearch for more papers by this authorMatthias Falmbigl, Matthias Falmbigl Institute of Physical Chemistry, University of Vienna, Währingerstrasse 42, 1090 Wien, AustriaSearch for more papers by this authorPeter Rogl, Peter Rogl Institute of Physical Chemistry, University of Vienna, Währingerstrasse 42, 1090 Wien, AustriaSearch for more papers by this authorPatrick Heinrich, Patrick Heinrich Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorEsmaeil Royanian, Esmaeil Royanian Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorErnst Bauer, Ernst Bauer Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorSatyam Suwas, Satyam Suwas Department of Materials Engineering, Indian Institute of Science, Bangalore, 560 012 IndiaSearch for more papers by this authorRamesh Chandra Mallik, Corresponding Author Ramesh Chandra Mallik Department of Physics, Indian Institute of Science, Bangalore, 560012 IndiaCorresponding author: e-mail [email protected], Phone: +91 (80) 2293 2450, Fax: +91 (80) 2360 2602Search for more papers by this author Raju Chetty, Raju Chetty Department of Physics, Indian Institute of Science, Bangalore, 560012 IndiaSearch for more papers by this authorMatthias Falmbigl, Matthias Falmbigl Institute of Physical Chemistry, University of Vienna, Währingerstrasse 42, 1090 Wien, AustriaSearch for more papers by this authorPeter Rogl, Peter Rogl Institute of Physical Chemistry, University of Vienna, Währingerstrasse 42, 1090 Wien, AustriaSearch for more papers by this authorPatrick Heinrich, Patrick Heinrich Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorEsmaeil Royanian, Esmaeil Royanian Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorErnst Bauer, Ernst Bauer Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Wien, AustriaSearch for more papers by this authorSatyam Suwas, Satyam Suwas Department of Materials Engineering, Indian Institute of Science, Bangalore, 560 012 IndiaSearch for more papers by this authorRamesh Chandra Mallik, Corresponding Author Ramesh Chandra Mallik Department of Physics, Indian Institute of Science, Bangalore, 560012 IndiaCorresponding author: e-mail [email protected], Phone: +91 (80) 2293 2450, Fax: +91 (80) 2360 2602Search for more papers by this author First published: 23 August 2013 https://doi.org/10.1002/pssa.201329264Citations: 23Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Quinary chalcogenide compounds Cu2.1Zn0.9Sn1−xInxSe4 (0 ≤ x ≤ 0.1) were prepared by melting (1170 K) followed by annealing (773 K) for 172 h. Powder X-ray diffraction (XRD) data accompanied by electron probe microanalysis (EPMA) and Raman spectra of all the samples confirmed the formation of a tetragonal kesterite structure with Cu2FeSnS4-type. The thermoelectric properties of all the samples were measured as a function of temperature in the range of 300–780 K. The electrical resistivity of all the samples exhibits metallic-like behavior. The positive values of the Seebeck coefficient and the Hall coefficient reveal that holes are the majority charge carriers. The codoping of copper and indium leads to a significant increase of the electrical resistivity and the Seebeck coefficient as a function of temperature above 650 K. The thermal conductivity of all the samples decreases with increasing temperature. Lattice thermal conductivity is not significantly modified as the doping content may infer negligible mass fluctuation scattering for copper/zinc and indium/tin substitution. Even though, the power factors (S2/ρ) of indium-doped samples Cu2.1Zn0.9Sn1−xInxSe4 (x = 0.05, 0.075) are almost the same, the maximum zT = 0.45 at 773 K was obtained for Cu2.1Zn0.9Sn0.925In0.075Se4 due to its smaller value of thermal conductivity. References 1 P. Larson, S. D. Mahanti, and M. G. Kanatzidis, Phys. Rev. B 61, 8162 (2000). 10.1103/PhysRevB.61.8162 CASWeb of Science®Google Scholar 2 C. Keffert, T. M. Hayes, and A. Bienenstock, Phys. Rev. Lett. 21, 1676 (1968). 10.1103/PhysRevLett.21.1676 Web of Science®Google Scholar 3 G. S. Nolas and H. J. Goldsmid, in: Thermal Conductivity, Theory, Properties and Applications, edited by T. M. Tritt (Kluwer Academic/Plenum, New York, USA, 2004), p. 112. Google Scholar 4 G. D. 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Publication Year: 2013
Publication Date: 2013-08-23
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 24
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