Title: Cyclic Chemical-Vapor-Deposited TiO[sub 2]∕Al[sub 2]O[sub 3] Film Using Trimethyl Aluminum, Tetrakis(diethylamino)titanium, and O[sub 2]
Abstract: Titanium aluminum oxide films have been studied as potential alternative gate dielectrics. However, most studies have focused on sputtered films. In this study, we demonstrate that a combination of tetrakis(diethylamino)titanium, trimethyl aluminum, oxygen, and cyclic chemical vapor deposition (CVD) is a promising approach for laminated films with low impurities and high thermal stability even at low temperatures. The growth of the films is carried out in a cold-wall CVD chamber at and . Our studies show that the properties of improve with the addition of even a few percent of . X-ray diffraction analyses indicate that as-deposited films have amorphous structure. Upon annealing as-deposited films in Ar at for , films maintain their amorphous structure, while pure films crystallize at these conditions. Atomic force microscopy shows that the surfaces of films are smoother than those of films deposited at the same conditions. Even though annealing increases the roughness of the films, film roughness is still significantly lower than that of as-deposited films. Moreover, Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy show that there is no detectable formation of interfacial silicon oxide and negligible carbon impurity in as-deposited films.
Publication Year: 2007
Publication Date: 2007-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 19
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