Title: Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
Abstract: Inversion n-channel GaN metal-oxide-semiconductor field-effect-transistors (MOSFETs) using atomic-layer-deposited Al2O3 as a gate dielectric have been fabricated, showing well-behaved drain I-V characteristics. The drain current was scaled with gate length (varying from 1to16μm), showing a maximum drain current of ∼10mA∕mm in a device of 1μm gate length, at a gate voltage of 8V and a drain voltage of 10V. At a drain voltage of 0.1V, a high Ion∕Ioff ratio of 2.5×105 was achieved with a very low off-state leakage of 4×10−13A∕μm. Both MOSFET and MOS capacitor showed very low leakage current densities of 10−8A∕cm2 at biasing fields of 4MV∕cm. The interfacial density of states was calculated to be (4–9)×1011cm−2eV−1 near the midgap.
Publication Year: 2008
Publication Date: 2008-08-04
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 57
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot