Publication Information

{'id': 'https://openalex.org/W1598917330', 'doi': 'https://doi.org/10.1109/korus.2004.1555320', 'title': 'Plasma chemical etching of silicon in mems - technology', 'display_name': 'Plasma chemical etching of silicon in mems - technology', 'publication_year': 2005, 'publication_date': '2005-12-22', 'ids': {'openalex': 'https://openalex.org/W1598917330', 'doi': 'https://doi.org/10.1109/korus.2004.1555320', 'mag': '1598917330'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/korus.2004.1555320', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306524428', 'display_name': 'Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004.', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5076959145', 'display_name': 'B.K. Bogomolov', 'orcid': 'https://orcid.org/0000-0002-5543-8451'}, 'institutions': [{'id': 'https://openalex.org/I91727514', 'display_name': 'Novosibirsk State Technical University', 'ror': 'https://ror.org/01b2f6h61', 'country_code': 'RU', 'type': 'education', 'lineage': ['https://openalex.org/I91727514']}], 'countries': ['RU'], 'is_corresponding': True, 'raw_author_name': 'B.K. Bogomolov', 'raw_affiliation_strings': ['Novosibirsk State Tech. Univ., Russia'], 'affiliations': [{'raw_affiliation_string': 'Novosibirsk State Tech. Univ., Russia', 'institution_ids': ['https://openalex.org/I91727514']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5076959145'], 'corresponding_institution_ids': ['https://openalex.org/I91727514'], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 7, 'citation_normalized_percentile': {'value': 0.48897, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 79, 'max': 80}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11169', 'display_name': 'Silicon Nanostructures and Photoluminescence', 'score': 0.997, 'subfield': {'id': 'https://openalex.org/subfields/2505', 'display_name': 'Materials Chemistry'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11169', 'display_name': 'Silicon Nanostructures and Photoluminescence', 'score': 0.997, 'subfield': {'id': 'https://openalex.org/subfields/2505', 'display_name': 'Materials Chemistry'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11272', 'display_name': 'Nanowire Synthesis and Applications', 'score': 0.9933, 'subfield': {'id': 'https://openalex.org/subfields/2204', 'display_name': 'Biomedical Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10781', 'display_name': 'Plasma Diagnostics and Applications', 'score': 0.9928, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/isotropic-etching', 'display_name': 'Isotropic etching', 'score': 0.7431356}, {'id': 'https://openalex.org/keywords/dry-etching', 'display_name': 'Dry etching', 'score': 0.7068489}, {'id': 'https://openalex.org/keywords/plasma-etching', 'display_name': 'Plasma Etching', 'score': 0.63380814}], 'concepts': [{'id': 'https://openalex.org/C100460472', 'wikidata': 'https://www.wikidata.org/wiki/Q2368605', 'display_name': 'Etching (microfabrication)', 'level': 3, 'score': 0.91632986}, {'id': 'https://openalex.org/C37977207', 'wikidata': 'https://www.wikidata.org/wiki/Q175561', 'display_name': 'Microelectromechanical systems', 'level': 2, 'score': 0.86317146}, {'id': 'https://openalex.org/C130472188', 'wikidata': 'https://www.wikidata.org/wiki/Q1640159', 'display_name': 'Reactive-ion etching', 'level': 4, 'score': 0.7802899}, {'id': 'https://openalex.org/C33220542', 'wikidata': 'https://www.wikidata.org/wiki/Q6086567', 'display_name': 'Isotropic etching', 'level': 4, 'score': 0.7431356}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.728809}, {'id': 'https://openalex.org/C1291036', 'wikidata': 'https://www.wikidata.org/wiki/Q1191918', 'display_name': 'Dry etching', 'level': 4, 'score': 0.7068489}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.66700494}, {'id': 'https://openalex.org/C107187091', 'wikidata': 'https://www.wikidata.org/wiki/Q2392011', 'display_name': 'Plasma etching', 'level': 4, 'score': 0.63380814}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.45717648}, {'id': 'https://openalex.org/C82706917', 'wikidata': 'https://www.wikidata.org/wiki/Q10251', 'display_name': 'Plasma', 'level': 2, 'score': 0.43278408}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.39255536}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.05062154}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/korus.2004.1555320', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306524428', 'display_name': 'Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004.', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.41, 'id': 'https://metadata.un.org/sdg/9', 'display_name': 'Industry, innovation and infrastructure'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 8, 'referenced_works': ['https://openalex.org/W1524017494', 'https://openalex.org/W1852942741', 'https://openalex.org/W1992648298', 'https://openalex.org/W2123939625', 'https://openalex.org/W2144255718', 'https://openalex.org/W2166209692', 'https://openalex.org/W2546297835', 'https://openalex.org/W4393259791'], 'related_works': ['https://openalex.org/W4387743859', 'https://openalex.org/W2765886561', 'https://openalex.org/W2542354647', 'https://openalex.org/W2466887265', 'https://openalex.org/W2368395761', 'https://openalex.org/W2093631838', 'https://openalex.org/W2082133582', 'https://openalex.org/W2045553774', 'https://openalex.org/W2011001474', 'https://openalex.org/W1990831804'], 'abstract_inverted_index': {'In': [0], 'this': [1], 'work,': [2], 'the': [3, 6, 22], 'results': [4, 28], 'for': [5, 21], 'modeling': [7], 'and': [8], 'experimental': [9], 'research': [10], 'of': [11, 15, 29, 35, 48, 55, 58, 70], 'plasma': [12], 'chemical': [13, 56], 'etching': [14, 23, 47], 'Si': [16, 36], 'are': [17, 31], 'described.': [18], 'The': [19, 27, 33, 46, 72], 'model': [20], 'process': [24, 73], 'is': [25, 44, 50, 67], 'constructed.': [26], 'accounts': [30], 'given.': [32], 'speed': [34], 'etching,': [37], 'up': [38], 'to': [39, 52, 61], '6.5': [40], '/spl': [41], 'mu/m/min,': [42], 'experimentally': [43], 'received.': [45], 'silicon': [49], 'limited': [51], 'a': [53, 62, 68], 'stage': [54], 'delivery': [57], 'active': [59], 'particles': [60], 'surface': [63], 'Si,': [64], 'where': [65], 'there': [66], 'reaction': [69], 'etching.': [71], 'can': [74], 'be': [75], 'used': [76], 'in': [77], 'MEMS-technology.': [78]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1598917330', 'counts_by_year': [{'year': 2018, 'cited_by_count': 1}, {'year': 2016, 'cited_by_count': 2}, {'year': 2014, 'cited_by_count': 1}, {'year': 2012, 'cited_by_count': 3}], 'updated_date': '2024-12-13T13:51:50.642459', 'created_date': '2016-06-24'}