Title: Influence of the description of valence electron excitation on the proton induced electron emission characteristics from insulators calculated by a Monte Carlo simulation
Abstract:The inelastic mean free path plays an important role in many different domains like quantiative surface analysis by Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy, low-energy electro...The inelastic mean free path plays an important role in many different domains like quantiative surface analysis by Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy, low-energy electron diffraction Despite the importance of these inelastic mean free paths, there are only few experimental values for a given material. From a theoretical point of view, the inelastic mean free path has been calculated from first principles for free-electron materials like aluminum by Lindhard and recently for insulators by G. A. Rezvani et al.[1]. There also exist a certain number of methods based on the extension of optical data to non zero values of momentum transfer [2],[3],[4]. Finally, a few methods are based on the calculation of inelastic mean free paths from an analytical formula [5],[6]. In this paper, we are interested in calculating the inelastic mean free path for insulators and especially for alumina. We will use this result to study proton induced electron emission from insulators. We will describe and apply hereafter the methods proposed by Tung, Penn and Ashley. We will also analyse the influence of the choice of the method for calculating the mean free path on the secondary emission yield calculated by Monte Carlo simulation.Read More
Publication Year: 1998
Publication Date: 1998-01-01
Language: en
Type: article
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