Get quick answers to your questions about the article from our AI researcher chatbot
{'id': 'https://openalex.org/W4377000134', 'doi': 'https://doi.org/10.1109/access.2023.3277200', 'title': 'Gallium Nitride Power Devices: A State of the Art Review', 'display_name': 'Gallium Nitride Power Devices: A State of the Art Review', 'publication_year': 2023, 'publication_date': '2023-01-01', 'ids': {'openalex': 'https://openalex.org/W4377000134', 'doi': 'https://doi.org/10.1109/access.2023.3277200'}, 'language': 'en', 'primary_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1109/access.2023.3277200', 'pdf_url': 'https://ieeexplore.ieee.org/ielx7/6287639/10005208/10128694.pdf', 'source': {'id': 'https://openalex.org/S2485537415', 'display_name': 'IEEE Access', 'issn_l': '2169-3536', 'issn': ['2169-3536'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': 'cc-by-nc-nd', 'license_id': 'https://openalex.org/licenses/cc-by-nc-nd', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'gold', 'oa_url': 'https://ieeexplore.ieee.org/ielx7/6287639/10005208/10128694.pdf', 'any_repository_has_fulltext': True}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5091968489', 'display_name': 'Ander Udabe', 'orcid': 'https://orcid.org/0000-0003-0186-9800'}, 'institutions': [{'id': 'https://openalex.org/I162361429', 'display_name': 'Mondragon University', 'ror': 'https://ror.org/00wvqgd19', 'country_code': 'ES', 'type': 'education', 'lineage': ['https://openalex.org/I162361429', 'https://openalex.org/I4210092206']}], 'countries': ['ES'], 'is_corresponding': False, 'raw_author_name': 'Ander Udabe', 'raw_affiliation_strings': ['Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain'], 'affiliations': [{'raw_affiliation_string': 'Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain', 'institution_ids': ['https://openalex.org/I162361429']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5058410208', 'display_name': 'Igor Baraia-Etxaburu', 'orcid': 'https://orcid.org/0000-0003-4161-7368'}, 'institutions': [{'id': 'https://openalex.org/I162361429', 'display_name': 'Mondragon University', 'ror': 'https://ror.org/00wvqgd19', 'country_code': 'ES', 'type': 'education', 'lineage': ['https://openalex.org/I162361429', 'https://openalex.org/I4210092206']}], 'countries': ['ES'], 'is_corresponding': False, 'raw_author_name': 'Igor Baraia-Etxaburu', 'raw_affiliation_strings': ['Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain'], 'affiliations': [{'raw_affiliation_string': 'Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain', 'institution_ids': ['https://openalex.org/I162361429']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5044529671', 'display_name': 'David Garrido', 'orcid': 'https://orcid.org/0000-0003-1668-8981'}, 'institutions': [{'id': 'https://openalex.org/I162361429', 'display_name': 'Mondragon University', 'ror': 'https://ror.org/00wvqgd19', 'country_code': 'ES', 'type': 'education', 'lineage': ['https://openalex.org/I162361429', 'https://openalex.org/I4210092206']}], 'countries': ['ES'], 'is_corresponding': False, 'raw_author_name': 'David Garrido Diez', 'raw_affiliation_strings': ['Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain'], 'affiliations': [{'raw_affiliation_string': 'Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain', 'institution_ids': ['https://openalex.org/I162361429']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': {'value': 1850, 'currency': 'USD', 'value_usd': 1850, 'provenance': 'doaj'}, 'apc_paid': {'value': 1850, 'currency': 'USD', 'value_usd': 1850, 'provenance': 'doaj'}, 'fwci': 10.865, 'has_fulltext': True, 'fulltext_origin': 'pdf', 'cited_by_count': 37, 'citation_normalized_percentile': {'value': 0.999707, 'is_in_top_1_percent': True, 'is_in_top_10_percent': True}, 'cited_by_percentile_year': {'min': 99, 'max': 100}, 'biblio': {'volume': '11', 'issue': None, 'first_page': '48628', 'last_page': '48650'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10099', 'display_name': 'GaN-based semiconductor devices and materials', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/3104', 'display_name': 'Condensed Matter Physics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10361', 'display_name': 'Silicon Carbide Semiconductor Technologies', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T12529', 'display_name': 'Ga2O3 and related materials', 'score': 0.9955, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/power-electronics', 'display_name': 'Power Electronics', 'score': 0.5536948}, {'id': 'https://openalex.org/keywords/wide-bandgap-semiconductor', 'display_name': 'Wide-bandgap semiconductor', 'score': 0.5367981}, {'id': 'https://openalex.org/keywords/power-module', 'display_name': 'Power module', 'score': 0.4432062}], 'concepts': [{'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.79676044}, {'id': 'https://openalex.org/C2778871202', 'wikidata': 'https://www.wikidata.org/wiki/Q411713', 'display_name': 'Gallium nitride', 'level': 3, 'score': 0.7735191}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.68550736}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.65571284}, {'id': 'https://openalex.org/C178911571', 'wikidata': 'https://www.wikidata.org/wiki/Q593143', 'display_name': 'Power electronics', 'level': 3, 'score': 0.5536948}, {'id': 'https://openalex.org/C189278905', 'wikidata': 'https://www.wikidata.org/wiki/Q2157708', 'display_name': 'Wide-bandgap semiconductor', 'level': 2, 'score': 0.5367981}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.53087115}, {'id': 'https://openalex.org/C2780722187', 'wikidata': 'https://www.wikidata.org/wiki/Q412356', 'display_name': 'Silicon carbide', 'level': 2, 'score': 0.47868758}, {'id': 'https://openalex.org/C138331895', 'wikidata': 'https://www.wikidata.org/wiki/Q11650', 'display_name': 'Electronics', 'level': 2, 'score': 0.45650062}, {'id': 'https://openalex.org/C141812795', 'wikidata': 'https://www.wikidata.org/wiki/Q7236534', 'display_name': 'Power module', 'level': 3, 'score': 0.4432062}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.42202747}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.34275734}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.34088898}, {'id': 'https://openalex.org/C41008148', 'wikidata': 'https://www.wikidata.org/wiki/Q21198', 'display_name': 'Computer science', 'level': 0, 'score': 0.3223585}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.30725914}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.16208556}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.14777184}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 2, 'locations': [{'is_oa': True, 'landing_page_url': 'https://doi.org/10.1109/access.2023.3277200', 'pdf_url': 'https://ieeexplore.ieee.org/ielx7/6287639/10005208/10128694.pdf', 'source': {'id': 'https://openalex.org/S2485537415', 'display_name': 'IEEE Access', 'issn_l': '2169-3536', 'issn': ['2169-3536'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': 'cc-by-nc-nd', 'license_id': 'https://openalex.org/licenses/cc-by-nc-nd', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, {'is_oa': True, 'landing_page_url': 'https://hdl.handle.net/20.500.11984/6224', 'pdf_url': 'http://ebiltegia.mondragon.edu/xmlui/bitstream/20.500.11984/6224/1/Gallium_Nitride_Power_Devices_A_State_of_the_Art_Review.pdf', 'source': {'id': 'https://openalex.org/S4377196532', 'display_name': 'eRepository Mondragon University (Mondragon University)', 'issn_l': None, 'issn': None, 'is_oa': False, 'is_in_doaj': False, 'is_core': False, 'host_organization': 'https://openalex.org/I162361429', 'host_organization_name': 'Mondragon University', 'host_organization_lineage': ['https://openalex.org/I162361429'], 'host_organization_lineage_names': ['Mondragon University'], 'type': 'repository'}, 'license': 'cc-by-nc-nd', 'license_id': 'https://openalex.org/licenses/cc-by-nc-nd', 'version': 'submittedVersion', 'is_accepted': False, 'is_published': False}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.1109/access.2023.3277200', 'pdf_url': 'https://ieeexplore.ieee.org/ielx7/6287639/10005208/10128694.pdf', 'source': {'id': 'https://openalex.org/S2485537415', 'display_name': 'IEEE Access', 'issn_l': '2169-3536', 'issn': ['2169-3536'], 'is_oa': True, 'is_in_doaj': True, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319808', 'host_organization_name': 'Institute of Electrical and Electronics Engineers', 'host_organization_lineage': ['https://openalex.org/P4310319808'], 'host_organization_lineage_names': ['Institute of Electrical and Electronics Engineers'], 'type': 'journal'}, 'license': 'cc-by-nc-nd', 'license_id': 'https://openalex.org/licenses/cc-by-nc-nd', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'sustainable_development_goals': [{'id': 'https://metadata.un.org/sdg/7', 'display_name': 'Affordable and clean energy', 'score': 0.47}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 49, 'referenced_works': ['https://openalex.org/W1557984552', 'https://openalex.org/W1565540141', 'https://openalex.org/W1864244490', 'https://openalex.org/W2016237931', 'https://openalex.org/W2025505207', 'https://openalex.org/W2072704502', 'https://openalex.org/W2091783957', 'https://openalex.org/W2095452067', 'https://openalex.org/W2114001304', 'https://openalex.org/W2137778525', 'https://openalex.org/W2238278140', 'https://openalex.org/W2304792220', 'https://openalex.org/W2461874365', 'https://openalex.org/W2473508048', 'https://openalex.org/W2480129962', 'https://openalex.org/W2485705130', 'https://openalex.org/W2507800947', 'https://openalex.org/W257069209', 'https://openalex.org/W2743457035', 'https://openalex.org/W2748658438', 'https://openalex.org/W2753630185', 'https://openalex.org/W2754591973', 'https://openalex.org/W2766159526', 'https://openalex.org/W2785516241', 'https://openalex.org/W2788013722', 'https://openalex.org/W2792371974', 'https://openalex.org/W2800565236', 'https://openalex.org/W2805576206', 'https://openalex.org/W2806602868', 'https://openalex.org/W2904741388', 'https://openalex.org/W2904843615', 'https://openalex.org/W2951619752', 'https://openalex.org/W2952601153', 'https://openalex.org/W2964997277', 'https://openalex.org/W2970121542', 'https://openalex.org/W2980244005', 'https://openalex.org/W2990419378', 'https://openalex.org/W2996551815', 'https://openalex.org/W3020498870', 'https://openalex.org/W3038196646', 'https://openalex.org/W3046239329', 'https://openalex.org/W3165263809', 'https://openalex.org/W3187297003', 'https://openalex.org/W4200047630', 'https://openalex.org/W4200064421', 'https://openalex.org/W4240235572', 'https://openalex.org/W4241070446', 'https://openalex.org/W4255567910', 'https://openalex.org/W585599150'], 'related_works': ['https://openalex.org/W4311628237', 'https://openalex.org/W4214909888', 'https://openalex.org/W4206738542', 'https://openalex.org/W3207919737', 'https://openalex.org/W3131731727', 'https://openalex.org/W2744819063', 'https://openalex.org/W2189251546', 'https://openalex.org/W2127450915', 'https://openalex.org/W2106186499', 'https://openalex.org/W1896959734'], 'abstract_inverted_index': {'Wide': [0], 'Bandgap': [1], '(WBG)': [2], 'semiconductor': [3], 'materials': [4], 'present': [5, 107], 'promising': [6, 156], 'electrical': [7], 'and': [8, 51, 59, 101, 191], 'thermal': [9], 'characteristics': [10], 'for': [11], 'Power': [12, 73], 'Electronics': [13], 'applications.': [14], 'These': [15], 'WBG': [16], 'devices': [17, 41, 63, 75, 157, 185], 'make': [18], 'it': [19, 150], 'possible': [20], 'the': [21, 57, 129, 152, 159, 166, 179], 'development': [22], 'of': [23, 48, 61, 131, 143, 154, 168, 178, 181], 'more': [24, 68], 'efficient': [25], 'converters': [26], 'with': [27], 'higher': [28, 124], 'power': [29, 53, 66, 90, 146, 170, 182], 'densities.': [30], 'In': [31, 84, 119], 'contrast': [32], 'to': [33, 86, 116, 164], 'Silicon': [34, 133], 'Carbide': [35], '(SiC)': [36], 'devices,': [37, 172], 'Gallium': [38, 183], 'Nitride': [39, 184], '(GaN)': [40], 'are': [42, 76], 'several': [43], 'steps': [44], 'behind': [45], 'in': [46, 64, 135, 162], 'terms': [47], 'development,': [49], 'standardization': [50], 'achievable': [52], 'levels.': [54], 'This': [55], 'makes': [56, 149], 'use': [58, 130], 'integration': [60], 'these': [62, 155, 169], 'real': [65], 'applications': [67], 'challenging.': [69], 'Commercially': [70], 'available': [71], 'current': [72], 'GaN': [74, 147, 171], 'based': [77], 'on': [78, 187], 'lateral': [79], 'normally': [80, 88], 'ON': [81], 'HEMT': [82], 'transistors.': [83, 103], 'order': [85, 163], 'get': [87], 'OFF': [89], 'transistors,': [91], 'two': [92], 'transistor': [93], 'structures': [94], 'have': [95, 123], 'been': [96], 'proposed:': [97], 'enhancement': [98], 'mode': [99], '(e-mode)': [100], 'hybrid': [102, 121], 'Current': [104], 'E-mode': [105], 'transistors': [106, 122], 'a': [108, 132, 144, 176], 'low': [109], 'gate': [110, 125, 192], 'threshold': [111, 126], 'voltage': [112], 'which': [113], 'could': [114], 'lead': [115], 'crosstalk': [117], 'problems.': [118], 'contrast,': [120], 'voltages,': [127], 'however,': [128], 'MOSFET': [134], 'their': [136, 139, 188], 'structure': [137], 'limits': [138], 'performance.': [140], 'The': [141], 'lack': [142], 'standard': [145], 'device': [148], 'difficult': [151], 'adoption': [153, 167], 'by': [158], 'industry.': [160], 'Thus,': [161], 'facilitate': [165], 'this': [173], 'paper': [174], 'presents': [175], 'State': [177], 'Art': [180], 'focusing': [186], 'structures,': [189], 'basics': [190], 'terminal': [193], 'requirements.': [194]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W4377000134', 'counts_by_year': [{'year': 2024, 'cited_by_count': 27}, {'year': 2023, 'cited_by_count': 8}], 'updated_date': '2024-12-11T11:15:20.206132', 'created_date': '2023-05-19'}