Title: Fully Transparent and High‐Performance ε‐Ga<sub>2</sub>O<sub>3</sub> Photodetector Arrays for Solar‐Blind Imaging and Deep‐Ultraviolet Communication
Abstract: Advanced Photonics ResearchVolume 3, Issue 11 2270037 Cover PictureOpen Access Fully Transparent and High-Performance ε-Ga2O3 Photodetector Arrays for Solar-Blind Imaging and Deep-Ultraviolet Communication Shuren Zhou, Shuren Zhou Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHong Zhang, Hong Zhang Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorXuan Peng, Xuan Peng Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHaowen Liu, Haowen Liu Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHonglin Li, Honglin Li Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorYuanqiang Xiong, Yuanqiang Xiong Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorWanjun Li, Corresponding Author Wanjun Li [email protected] orcid.org/0000-0003-4707-4288 Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorPing-An Yang, Corresponding Author Ping-An Yang [email protected] School of Automation, Chongqing University of Posts and Telecommunications, Chongqing, 400065 P. R. ChinaSearch for more papers by this authorLijuan Ye, Corresponding Author Lijuan Ye [email protected] Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorChunyang Kong, Chunyang Kong Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this author Shuren Zhou, Shuren Zhou Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHong Zhang, Hong Zhang Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorXuan Peng, Xuan Peng Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHaowen Liu, Haowen Liu Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorHonglin Li, Honglin Li Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorYuanqiang Xiong, Yuanqiang Xiong Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorWanjun Li, Corresponding Author Wanjun Li [email protected] orcid.org/0000-0003-4707-4288 Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorPing-An Yang, Corresponding Author Ping-An Yang [email protected] School of Automation, Chongqing University of Posts and Telecommunications, Chongqing, 400065 P. R. ChinaSearch for more papers by this authorLijuan Ye, Corresponding Author Lijuan Ye [email protected] Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this authorChunyang Kong, Chunyang Kong Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 401331 P. R. ChinaSearch for more papers by this author First published: 02 November 2022 https://doi.org/10.1002/adpr.202270037AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Fully-Transparent Solar-Blind Photodetectors In article number 2200192, Wanjun Li, Ping-An Yang, Lijuan Ye, and co-workers propose a strategy to construct fully transparent and high-performance solar-blind deep ultraviolet photodetector arrays based on ε-Ga2O3 films using indium tin oxide (ITO), indium gallium zinc oxide (IGZO), and aluminum zinc oxide (AZO) transparent conductive oxides as electrodes. In addition, proof-of-concept ultraviolet imaging and optical communication demonstrate the strong application prospects of ε-Ga2O3-based solar-blind photodetectors in the above fields. Volume3, Issue11November 20222270037 RelatedInformation