Title: Electrical Modeling of One Selector-One Resistor (1S-1R) for Mitigating the Sneak-Path Current in a Nano-Crossbar Array *
Abstract:This chapter introduces resistive random-access memory (RRAM), a futuristic memory technology that excels its counterparts in terms of reliability, nano-scale dimensions, energy per bit, and fast read...This chapter introduces resistive random-access memory (RRAM), a futuristic memory technology that excels its counterparts in terms of reliability, nano-scale dimensions, energy per bit, and fast read/write times. Also, it is promising for use in neuromorphic computing and digital applications. However, the major challenge encountered during the progress of the technology is the presence of leakage current (sneak path current) while using it in crossbar arrays. Various techniques are employed to mitigate the sneak current problem. However, associating a selector with RRAM is an efficient method. To study the one selector-one RRAM (1S-1R) characteristics, the electrical model of the selector, as well as RRAM, is necessary; therefore, this chapter discusses the electrical modeling of selector device (1S), RRAM devices (1R), integration of selector models with the RRAM model (1S-1R), and formation of 1S-1R crossbar arrays. The selector device used to model this is Pt/Ta2O5/TaOx /TiO2/Pt, and the RRAM model adopted is Pt/Ta2O5/TaOx/Pt. Further, various parameters are analyzed, such as R off /R on ratio, nonlinearity, and off-current are improved in the 1S-1R cell compared to RRAM characteristics. Besides, it is perceived that 98% of the sneak path current is mitigated in the 1S-1R crossbar array compared to the 1R crossbar array.Read More
Publication Year: 2022
Publication Date: 2022-10-04
Language: en
Type: book-chapter
Indexed In: ['crossref']
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Cited By Count: 1
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