Title: Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga–N–As System
Abstract: physica status solidi (b)Volume 228, Issue 1 p. 223-225 Original Paper Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga–N–As System S.V. Novikov, S.V. Novikov [email protected] School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorT. Li, T. Li School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorA.J. Winser, A.J. Winser School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorR.P. Campion, R.P. Campion School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.R. Staddon, C.R. Staddon School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.S. Davis, C.S. Davis School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorI. Harrison, I. Harrison School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.T. Foxon, C.T. Foxon School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this author S.V. Novikov, S.V. Novikov [email protected] School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorT. Li, T. Li School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorA.J. Winser, A.J. Winser School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorR.P. Campion, R.P. Campion School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.R. Staddon, C.R. Staddon School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.S. Davis, C.S. Davis School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorI. Harrison, I. Harrison School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this authorC.T. Foxon, C.T. Foxon School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UKSearch for more papers by this author First published: 05 November 2001 https://doi.org/10.1002/1521-3951(200111)228:1<223::AID-PSSB223>3.0.CO;2-6Citations: 10AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract We have investigated the temperature dependence of the transition from single phase films of GaN1—xAsx to phase separated layers, which show regions of hexagonal [0001] oriented GaN, cubic [111] oriented GaAs and hexagonal [0001] oriented GaN1—xAsx. We see a strong temperature dependence of the arsenic flux at which GaAs inclusions are first observed. Finally the intensity of blue emission observed in As-doped GaN samples decreases strongly with decreasing growth temperature. Citing Literature Volume228, Issue1November 2001Pages 223-225 RelatedInformation
Publication Year: 2001
Publication Date: 2001-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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