Title: Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
Abstract: physica status solidi (b)Volume 216, Issue 1 p. 381-389 Original Paper Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices O. Ambacher, O. Ambacher [email protected] Search for more papers by this authorR. Dimitrov, R. Dimitrov Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, GermanySearch for more papers by this authorM. Stutzmann, M. Stutzmann Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, GermanySearch for more papers by this authorB.E. Foutz, B.E. Foutz School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorM.J. Murphy, M.J. Murphy School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorJ.A. Smart, J.A. Smart School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorJ.R. Shealy, J.R. Shealy School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorN.G. Weimann, N.G. Weimann School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorK. Chu, K. Chu School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorM. Chumbes, M. Chumbes School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorB. Green, B. Green School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorA.J. Sierakowski, A.J. Sierakowski School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorW.J. Schaff, W.J. Schaff School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorL.F. Eastman, L.F. Eastman School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this author O. Ambacher, O. Ambacher [email protected] Search for more papers by this authorR. Dimitrov, R. Dimitrov Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, GermanySearch for more papers by this authorM. Stutzmann, M. Stutzmann Walter Schottky Institute, Technical University Munich, Am Coulombwall, D-85748 Garching, GermanySearch for more papers by this authorB.E. Foutz, B.E. Foutz School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorM.J. Murphy, M.J. Murphy School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorJ.A. Smart, J.A. Smart School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorJ.R. Shealy, J.R. Shealy School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorN.G. Weimann, N.G. Weimann School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorK. Chu, K. Chu School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorM. Chumbes, M. Chumbes School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorB. Green, B. Green School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorA.J. Sierakowski, A.J. Sierakowski School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorW.J. Schaff, W.J. Schaff School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this authorL.F. Eastman, L.F. Eastman School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USASearch for more papers by this author First published: 09 November 1999 https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<381::AID-PSSB381>3.0.CO;2-OCitations: 72AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The wurzite group-III nitrides InN, GaN, and AlN are tetrahedrally coordinated direct band gap semiconductors having a hexagonal Bravais lattice with four atoms per unit cell. As a consequence of the noncentrosymmetry of the wurzite structure and the large ionicity factor of the covalent metal–nitrogen bond, a large spontaneous polarization oriented along the hexagonal c-axis is predicted. In addition, group-III nitrides are highly piezoelectric. The strain induced piezoelectric as well as the spontaneous polarizations are expected to be present and to govern the optical and electrical properties of GaN based heterostructures to a certain extent, due to the huge polarization constants which are one of the most fascinating aspects of the nitrides. In this paper we will present theoretical and experimental results demonstrating how polarization induced electric fields and bound interface charges in AlGaN/GaN, InGaN/GaN and AlInN/GaN heterostructures lead to the formation of two-dimensional carrier gases suitable for the fabrication of high power microwave frequency transistors. Citing Literature Volume216, Issue1November 1999Pages 381-389 RelatedInformation
Publication Year: 1999
Publication Date: 1999-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 18
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