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{'疎水性有機高分子膜をゲート表面イオン感応層に用いたISFETを製作し,そのpH-電位応答とアルブミンおよび界面活性剤を表面に吸着させたときの電位応答を調べた。pH-電位応答はこれまでの無機物をイオソ感応層にもつISFETとはかなり異なった非線形な特性であった。イオソ感応面での水素イオン解離平衡反応と電気二重層を考慮したモデルによるpH-電位応答の計算結果は,無機・有機どちらのイオン感応面をもっISFETでの実測値をもよく説明することができた。アルブミンや界面活性剤の吸着が界面電位に与える影響は,吸着物質の濃度,共存イオン濃度,および溶液のpH値に依存することがわかったが,共存イオン濃度依存性は吸着物質によらない共通な傾向で,特定の濃度以上で吸着の影響が観測されなくなることがわかった。吸着物質の大きさとイオン濃度から決まるDebye長を使ったモデル計算から,これは吸着物質の電荷が遮蔽されるために生じたものと解釈された。ISFETを生体内で使用する場合,タンパクなどの吸着物質による妨害は無視できる大きさであり,pH感度をもたない有機高分子膜ゲートISFETは参照電極として使用可能であると考えられた。': [0]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W4240238736', 'counts_by_year': [{'year': 2016, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 1}, {'year': 2012, 'cited_by_count': 2}], 'updated_date': '2024-09-10T07:14:58.088749', 'created_date': '2022-05-12'}