Title: Modeling and Analysis of IGBT Power Module Electro-thermal Coupling Model
Abstract: Power semiconductor devices play a key role in aerospace, electric vehicles, medical and so on. As the main force in power semiconductor devices, IGBT is currently the most advantageous power semiconductor device. Firstly, this paper proposes a power loss calculation model based on the average loss of the switching period. Secondly, an electrothermal simulation model of the IGBT module is established in MATLAB and PLECS combined with the thermal network model. Finally, the simulation results of the two models are compared to discuss the influence of different parameter changes on the junction temperature and power loss of the IGBT module. Form the simulation analysis, it can be seen that the electrothermal model proposed in this paper can accurately determine the trend of device junction temperature changes, and has a good application prospect in the life prediction of power devices in the future.
Publication Year: 2021
Publication Date: 2021-05-28
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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