Title: A Novel Junction Less Dual Gate Tunnel FET with SiGe Pocket for Low Power Applications
Abstract: A novel junction-less dual gate tunnel FET device with P+ Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> pocket near the source end is introduced in this paper. The device exhibits sharp subthreshold slope of 63.5mV/dec, very high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> and low drain induced barrier lowering (DIBL) of 22.2mV/V. The junction less behaviour and high-k gate oxide/high work function gate contact boosts the ON current in the device. The double gate enhances the control of the gate on channel conduction and improves the drain current. The P+ pocket near the source end having narrow band gap material Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> drastically reduces the tunnelling length and increases the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio. The device is designed and simulated on Visual TCAD (Cogenda) device simulator for 18nm gate length. The device is simulated for various pocket materials and gate contact/oxide combinations to propose the present one. It has been tested for various gate length and SiGe mole fraction variations. It is also found to be efficiently operational over a wide range of temperature from 200K to 400K.
Publication Year: 2021
Publication Date: 2021-05-19
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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