Title: The influence of ionizing radiation intensity on the surface states in MOS-structures
Abstract: The influence of ionizing radiation intensity of MOS-structures on the density of surface states is modeled. It is shown that general curve on which the dependencies of surface states density on total time of the ionizing radiation and following exposure at different intensities lie, is determined by the dispersive character of the hydrogen ions H+ transport. Deviations from this general curve observed immediately after the end of ionizing radiation are related to the transition process of ions H+ redistribution. The influence of ionizing radiation intensity on the surface states density in the bipolar devices with a thick base oxide, as well as in MOS devices with a thin gate oxide is determined by the dispersive transport of ions H+.
Publication Year: 2020
Publication Date: 2020-01-01
Language: en
Type: article
Indexed In: ['crossref']
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