Title: Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors
Abstract: A tunneling field-effect transistor (TFET) is a promising candidate to replace a MOSFET because the subthreshold swing (S^! of the TFET can be reduced below the 60 mV/dec at room temperature. However, the slope of log(1ps)-Z6s curve of the TFET becomes smaller as gate voltage (Z6s) increases and eventually becomes smaller than that of the MOSFET when Z6s is high. It is problematic in that the drain current (1ps) of the TFET cannot exceed that of the MOSFET. In this paper, we investigated the physical origin of the abnormal drain current increase in terms of band-to-band tunneling and drift mechanism,.
Publication Year: 2010
Publication Date: 2010-06-23
Language: en
Type: article
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