Title: Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon
Abstract: Broad-area InAs quantum dot lasers and segmented contact devices have been fabricated using monolithically grown InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. The device optoelectronic properties, optical gain and absorption have been studied and compared to structures with a nominally identical active region, grown on a native indium phosphide substrate.
Publication Year: 2019
Publication Date: 2019-01-01
Language: en
Type: article
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