Title: Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating
Abstract: We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> PO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> solution and Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.