Title: Identification of Film-Forming Species during SiC-CVD of CH<sub>3</sub>SiCl<sub>3</sub>/H<sub>2</sub> by Exploiting Deep Microtrenches
Abstract: The surface reaction kinetics of chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS; CH3SiCl3) and hydrogen were studied to identify gaseous species contributing to SiC film formation. First, SiC was deposited into relatively deep microtrenches with aspect ratios of up to 64:1, and the film-thickness profiles within the deep microtrenches were analyzed to evaluate the sticking probabilities (η) of the film-forming species. Two film-forming species were identified with η of 10−2 and 10−5 at 1,000°C. Next, their partial pressures at several positions in the reactor were estimated from their respective η and deposition rates. The low-η species was identified as MTS by comparing the partial pressure measured by quadrupole mass spectrometer with that calculated by elementary reaction simulations. Similarly, the high-η species was likely CH2SiCl3 generated via gas-phase decomposition of MTS. Such identification is crucial to optimize the deposition conditions and also design of a reactor.
Publication Year: 2019
Publication Date: 2019-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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