Title: Disorder induced quantized conductance with fractional value and universal conductance fluctuation in three-dimensional topological insulators
Abstract: We report a theoretical investigation on the conductance and its fluctuation of three-dimensional topological insulators (3D TI) in Bi2Se3 and Sb2Te3 in the presence of disorders. Extensive numerical simulations are carried out. We find that in the diffusive regime the conductance is quantized with fractional value. Importantly, the conductance fluctuation is also quantized with a universal value. For 3D TI connected by two terminals, three independent conductances Gzz, Gxx and Gzx are identified where z is the normal direction of quintuple layer of 3D TI (see inset of Fig.1). The quantized conductance are found to be 〈Gzz〉 = 1, 〈Gxx〉 = 4/3 and 〈Gzx〉 = 6/5 with corresponding quantized conductance fluctuation 0.54, 0.47, and 0.50. The quantization of average conductance and its fluctuation can be understood by theory of mode mixing. The experimental realization that can observe the quantization of average conductance is discussed.
Publication Year: 2012
Publication Date: 2012-02-29
Language: en
Type: article
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