Title: Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting
Abstract: Abstract We report stable and high performance amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) by using bulk‐accumulation (BA) and split active/source/drain layers. The a‐IGZO TFTs exhibit the mobility over 80 cm 2 /Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4‐inch semitransparent AMOLED using the oxide TFT backplane with the gate driver integrated.
Publication Year: 2019
Publication Date: 2019-07-03
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 13
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