Title: High step‐up DC‐DC converter with reduced voltage stress on devices
Abstract: International Transactions on Electrical Energy SystemsVolume 29, Issue 4 e2789 RESEARCH ARTICLE High step-up DC-DC converter with reduced voltage stress on devices Ebrahim Babaei, Corresponding Author Ebrahim Babaei [email protected] orcid.org/0000-0003-1460-5177 Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran Engineering Faculty, Near East University, 99138 Nicosia, North Cyprus, Mersin, 10 Turkey Correspondence Ebrahim Babaei, Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran. Email: [email protected] for more papers by this authorTohid Jalilzadeh, Tohid Jalilzadeh Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorMehran Sabahi, Mehran Sabahi Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorMohammad Maalandish, Mohammad Maalandish orcid.org/0000-0002-9346-9881 Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorRasoul Shalchi Alishah, Rasoul Shalchi Alishah Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this author Ebrahim Babaei, Corresponding Author Ebrahim Babaei [email protected] orcid.org/0000-0003-1460-5177 Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran Engineering Faculty, Near East University, 99138 Nicosia, North Cyprus, Mersin, 10 Turkey Correspondence Ebrahim Babaei, Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran. Email: [email protected] for more papers by this authorTohid Jalilzadeh, Tohid Jalilzadeh Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorMehran Sabahi, Mehran Sabahi Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorMohammad Maalandish, Mohammad Maalandish orcid.org/0000-0002-9346-9881 Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this authorRasoul Shalchi Alishah, Rasoul Shalchi Alishah Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, IranSearch for more papers by this author First published: 26 December 2018 https://doi.org/10.1002/etep.2789Citations: 22Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Summary The aim of this study is to propose a new nonisolated direct current (DC)–DC converter topology with high voltage gain and low voltage stress across the power devices. The proposed converter comprises a switch and n stages of inductor-capacitor-diode (L-C-D) units. Indeed, the proposed converter is based on the combination of the double-boost and Single-ended primary-inductor converter (SEPIC), which is extended to n stages by adding L-C-D units. As a consequence, the proposed converter can generate higher voltage gains with small values of the switch duty cycle, which increase the controllability of the converter. Also, as the number of stages increases, the normalized voltage stress across the power devices is reduced. As a result, the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) switch with low RDS-on and devices with reduced nominal voltage can be used in the proposed converter. Furthermore, another advantage of the proposed converter is that the percentage of input current ripple is low. The voltage and current stresses of the power devices are analyzed. The circuit performance is compared with other high step-up structures in the literature in terms of voltage gain and normalized voltage stress. The mathematical analysis and circuit performance of the proposed topology are verified by experimental results. Citing Literature Volume29, Issue4April 2019e2789 RelatedInformation