Title: Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
Abstract: The 1.2 kV-rated trench-gate SiC power MOSFET with thick trench bottom oxide is analyzed and compared with previous trench-gate SiC power MOSFET structures. Specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</sub> ), breakdown voltage (BV), threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ), gate-drain capacitance (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd, sp</sub> ) and gate charge (Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) were extracted using numerical simulations for trench bottom oxide thickness between 500 A and 8000 A. It was found that the electric field in the trench bottom oxide was below 4 MV/cm for oxide thickness beyond 4000 A. An analytical model is proposed to allow estimation of the electric field in the trench bottom oxide. The R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</sub> for the thick bottom oxide structure was 1.9 m Ω - cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (at Vgs of 20 V), Cgd, sp (at Vds= 1000 V) was 417 pF/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and Qgd, sp (at Vgs =20 V, R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> =10 Ω, Vds=800V) was 671 nC / cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is significantly better than most planar-gate devices. This structure has superior specific on-resistance compared with previous trench-gate and planar-gate structures.
Publication Year: 2018
Publication Date: 2018-10-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 20
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