Title: Quantum interferometry with a high-temperature single-spin qubit
Abstract: We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a Si tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g-factors, with either rectangular, sinusoidal, or ramp radio-frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry that is implemented in a Si device and is operated at a relatively high temperature.
Publication Year: 2018
Publication Date: 2018-09-07
Language: en
Type: preprint
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